Phu-Quan Pham, Ngoc Hong Nguyen, Lien Hoang Huynh, Tai Anh Van Vo, Thuy-Anh Tran, Truong Huu Nguyen, Hoa Thi Lai, Duy Thai Le, Thang Bach Phan, Ngoc Kim Pham
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Targeted doping-induced modulation of conductive filaments in ZnO films for digital-to-analog resistive switching
We present the fabrication and analysis of analog memristors based on Cu-doped wurtzite ZnO thin films deposited via stencil-assisted sputtering. Structural and morphological characterizations confirm uniform Cu incorporation without compromising film quality. Cr/ZnO/Cr and Cr/ZnO:Cu/Cr devices both show stable resistive switching. I–V fitting reveals that undoped ZnO switches via conductive filaments under space charge–limited current, while Cu doping introduces deep traps that activate Poole–Frenkel conduction. This transition enables tunable, multilevel analog switching. Additionally, oxygen vacancies generated under high bias expand the ON/OFF ratio and lower the SET voltage. These results highlight the potential of low-cost, doped oxides for neuromorphic computing.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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