一种用于相控阵系统的10.5-13 GHz 6位360°有源矢量调制器移相器,其有效值/相位误差为0.42 dB/2.2°

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Gaoyuan Zhao, Xiangyu Meng, Yanting Chen, Chuanjie Chen, Pengfei Bai
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引用次数: 0

摘要

本文提出了一种65纳米CMOS技术的6位有源移相器。该有源移相器的核心是混合正交发生器(HQG)、级间匹配网络和矢量调制器。本文采用小型垂直变压器作为混合正交发生器与矢量调制器的级间匹配网络,解决了带宽瓶颈问题。此外,本文还提出了一种可调电阻,以防止工艺角的影响。两个5位可变增益放大器在I和Q路径形成一个10位二进制加权矢量调制器。在10.5-13 GHz频段,该6位360°移相器实现了5.625°步进测量,其有效值误差为0.34-0.42 dB,有效值误差为1.67-2.2°。芯片面积为0.69 mm2,直流功耗为10.5 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10.5–13 GHz 6-bit 360°Active vector modulator phase shifter with 0.42 dB/2.2°RMS magnitude/phase errors for phased array systems
This paper presents a 6-bit active phase shifter in a 65 nm CMOS technology. The core of this active phase shifter is a hybrid quadrature generator(HQG), an inter-stage matching network, and a vector modulator. In this work, a compact vertical transformer is used as the inter-stage matching network of hybrid quadrature generator and vector modulator to release the bandwidth bottleneck. Furthermore, this work proposes an adjustable resistor to prevent the process corners from affecting. Two 5-bit variable gain amplifiers in the I and Q paths form a 10-bit binary-weighted vector modulator. In 10.5–13 GHz, this 6-bit 360°phase shifter achieves a measured 5.625°step with 0.34–0.42 dB RMS magnitude error and 1.67–2.2°RMS phase error. The chip area is 0.69 mm2, and DC power consumption is 10.5 mW.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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