Jon Velasco, Eduardo Fernández, Roberto Fernández de Luis, Maibelín Rosales, Leire Ruiz-Rubio, F. Javier del Campo
{"title":"基于金属氧化物的丝网印刷二极管","authors":"Jon Velasco, Eduardo Fernández, Roberto Fernández de Luis, Maibelín Rosales, Leire Ruiz-Rubio, F. Javier del Campo","doi":"10.1007/s10008-025-06269-2","DOIUrl":null,"url":null,"abstract":"<div><p>This study presents the fabrication and characterization of fully screen-printed p–n junction diodes based on metal oxide semiconductor inks. The diodes were produced entirely through scalable and low-cost screen-printing techniques on flexible polyethylene terephthalate (PET) substrates, employing nickel hydroxide (Ni(OH)₂) as the p-type semiconductor and tungsten trioxide (WO₃) as the n-type semiconductor. Unlike many previous reports, which often rely on hybrid approaches incorporating non-printed components or additional post-processing steps, this work demonstrates a fully printed structure, where all layers, including electrodes and semiconductors, are screen-printed. The influence of geometry, ink composition, and processing conditions on diode performance was investigated. Diodes with smaller active areas exhibited better rectification behavior, as increased surface area led to lower resistance and higher current requirements. The optimal ink formulation for the p-type Ni(OH)₂ was found to be a 1:15 weight ratio of Ni precursor to antimony-doped tin oxide particles (ATO), while excess tungsten oxide in the n-type WO₃ inks reduced performance due to surface coverage on conductive particles. Despite challenges such as printing defects, pinholes, and thick semiconductor layers (~ 20–60 μm), the diodes achieved rectification ratios comparable to other printed diodes previously reported in the literature.</p></div>","PeriodicalId":665,"journal":{"name":"Journal of Solid State Electrochemistry","volume":"29 2024","pages":"2395 - 2405"},"PeriodicalIF":2.6000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10008-025-06269-2.pdf","citationCount":"0","resultStr":"{\"title\":\"Metal oxide-based screen-printed diodes\",\"authors\":\"Jon Velasco, Eduardo Fernández, Roberto Fernández de Luis, Maibelín Rosales, Leire Ruiz-Rubio, F. Javier del Campo\",\"doi\":\"10.1007/s10008-025-06269-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study presents the fabrication and characterization of fully screen-printed p–n junction diodes based on metal oxide semiconductor inks. The diodes were produced entirely through scalable and low-cost screen-printing techniques on flexible polyethylene terephthalate (PET) substrates, employing nickel hydroxide (Ni(OH)₂) as the p-type semiconductor and tungsten trioxide (WO₃) as the n-type semiconductor. Unlike many previous reports, which often rely on hybrid approaches incorporating non-printed components or additional post-processing steps, this work demonstrates a fully printed structure, where all layers, including electrodes and semiconductors, are screen-printed. The influence of geometry, ink composition, and processing conditions on diode performance was investigated. Diodes with smaller active areas exhibited better rectification behavior, as increased surface area led to lower resistance and higher current requirements. The optimal ink formulation for the p-type Ni(OH)₂ was found to be a 1:15 weight ratio of Ni precursor to antimony-doped tin oxide particles (ATO), while excess tungsten oxide in the n-type WO₃ inks reduced performance due to surface coverage on conductive particles. Despite challenges such as printing defects, pinholes, and thick semiconductor layers (~ 20–60 μm), the diodes achieved rectification ratios comparable to other printed diodes previously reported in the literature.</p></div>\",\"PeriodicalId\":665,\"journal\":{\"name\":\"Journal of Solid State Electrochemistry\",\"volume\":\"29 2024\",\"pages\":\"2395 - 2405\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2025-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10008-025-06269-2.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Solid State Electrochemistry\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10008-025-06269-2\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ELECTROCHEMISTRY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Solid State Electrochemistry","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10008-025-06269-2","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
This study presents the fabrication and characterization of fully screen-printed p–n junction diodes based on metal oxide semiconductor inks. The diodes were produced entirely through scalable and low-cost screen-printing techniques on flexible polyethylene terephthalate (PET) substrates, employing nickel hydroxide (Ni(OH)₂) as the p-type semiconductor and tungsten trioxide (WO₃) as the n-type semiconductor. Unlike many previous reports, which often rely on hybrid approaches incorporating non-printed components or additional post-processing steps, this work demonstrates a fully printed structure, where all layers, including electrodes and semiconductors, are screen-printed. The influence of geometry, ink composition, and processing conditions on diode performance was investigated. Diodes with smaller active areas exhibited better rectification behavior, as increased surface area led to lower resistance and higher current requirements. The optimal ink formulation for the p-type Ni(OH)₂ was found to be a 1:15 weight ratio of Ni precursor to antimony-doped tin oxide particles (ATO), while excess tungsten oxide in the n-type WO₃ inks reduced performance due to surface coverage on conductive particles. Despite challenges such as printing defects, pinholes, and thick semiconductor layers (~ 20–60 μm), the diodes achieved rectification ratios comparable to other printed diodes previously reported in the literature.
期刊介绍:
The Journal of Solid State Electrochemistry is devoted to all aspects of solid-state chemistry and solid-state physics in electrochemistry.
The Journal of Solid State Electrochemistry publishes papers on all aspects of electrochemistry of solid compounds, including experimental and theoretical, basic and applied work. It equally publishes papers on the thermodynamics and kinetics of electrochemical reactions if at least one actively participating phase is solid. Also of interest are articles on the transport of ions and electrons in solids whenever these processes are relevant to electrochemical reactions and on the use of solid-state electrochemical reactions in the analysis of solids and their surfaces.
The journal covers solid-state electrochemistry and focusses on the following fields: mechanisms of solid-state electrochemical reactions, semiconductor electrochemistry, electrochemical batteries, accumulators and fuel cells, electrochemical mineral leaching, galvanic metal plating, electrochemical potential memory devices, solid-state electrochemical sensors, ion and electron transport in solid materials and polymers, electrocatalysis, photoelectrochemistry, corrosion of solid materials, solid-state electroanalysis, electrochemical machining of materials, electrochromism and electrochromic devices, new electrochemical solid-state synthesis.
The Journal of Solid State Electrochemistry makes the professional in research and industry aware of this swift progress and its importance for future developments and success in the above-mentioned fields.