用于中红外滤光片的三维Si/SiO2/Si非对称光栅设计、仿真与优化

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-03-28 DOI:10.1007/s12633-025-03291-x
Hamed Rahimi, Hamid Motahari
{"title":"用于中红外滤光片的三维Si/SiO2/Si非对称光栅设计、仿真与优化","authors":"Hamed Rahimi,&nbsp;Hamid Motahari","doi":"10.1007/s12633-025-03291-x","DOIUrl":null,"url":null,"abstract":"<div><p>This paper investigates and optimizes mid-wave infrared (MWIR) optical filters based on three-dimensional asymmetric grating structures of Si/SiO<sub>2</sub>/Si. MWIR filters hold significant importance due to their extensive applications in thermal imaging, spectroscopy, and sensing. The primary aim of this study is to achieve the maximum figure of merit (FOM) through precise tuning of the grating's structural parameters. Initially, the transmission spectra of the filters in the 9–11 µm wavelength range were simulated for various structures using the finite element method (FEM). Analysis of these spectra revealed two resonance modes exhibiting different interference behaviors based on changes in asymmetry parameters. Key parameters of each resonance mode, including transmission, peak wavelength, linewidth, and dip depth, were evaluated to calculate quality factors (Q-factor) and FOM. To optimize the FOM, two approaches were employed: artificial neural network (ANN) fitting on FEM data and direct optimization using the genetic algorithm (GA). The ANN model predicted a maximum FOM of 11.51 1/µm with optimal parameters: w<sub>sx</sub> = 80%, w<sub>sy</sub> = 10%, t<sub>sy</sub> = 10%, and t<sub>sx</sub> = 80%. Subsequently, the GA achieved an optimal FOM of 13.55 1/µm through direct parameter space search, with the best parameters being t<sub>sx</sub> = 86.98%, w<sub>sx</sub> = 65.39%, t<sub>sy</sub> = 45.76%, and w<sub>sy</sub> = 31.45%. These findings demonstrate that precise tuning of asymmetry parameters and applying appropriate optimization methods can significantly enhance the performance of MWIR filters and improve their spectral resolution.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1625 - 1637"},"PeriodicalIF":2.8000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design, Simulation, and Optimization of 3D Si/SiO2/Si Asymmetric Grating for Mid-InfraRed Filters\",\"authors\":\"Hamed Rahimi,&nbsp;Hamid Motahari\",\"doi\":\"10.1007/s12633-025-03291-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper investigates and optimizes mid-wave infrared (MWIR) optical filters based on three-dimensional asymmetric grating structures of Si/SiO<sub>2</sub>/Si. MWIR filters hold significant importance due to their extensive applications in thermal imaging, spectroscopy, and sensing. The primary aim of this study is to achieve the maximum figure of merit (FOM) through precise tuning of the grating's structural parameters. Initially, the transmission spectra of the filters in the 9–11 µm wavelength range were simulated for various structures using the finite element method (FEM). Analysis of these spectra revealed two resonance modes exhibiting different interference behaviors based on changes in asymmetry parameters. Key parameters of each resonance mode, including transmission, peak wavelength, linewidth, and dip depth, were evaluated to calculate quality factors (Q-factor) and FOM. To optimize the FOM, two approaches were employed: artificial neural network (ANN) fitting on FEM data and direct optimization using the genetic algorithm (GA). The ANN model predicted a maximum FOM of 11.51 1/µm with optimal parameters: w<sub>sx</sub> = 80%, w<sub>sy</sub> = 10%, t<sub>sy</sub> = 10%, and t<sub>sx</sub> = 80%. Subsequently, the GA achieved an optimal FOM of 13.55 1/µm through direct parameter space search, with the best parameters being t<sub>sx</sub> = 86.98%, w<sub>sx</sub> = 65.39%, t<sub>sy</sub> = 45.76%, and w<sub>sy</sub> = 31.45%. These findings demonstrate that precise tuning of asymmetry parameters and applying appropriate optimization methods can significantly enhance the performance of MWIR filters and improve their spectral resolution.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 7\",\"pages\":\"1625 - 1637\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03291-x\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03291-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

本文研究并优化了基于Si/SiO2/Si三维不对称光栅结构的中波红外滤光片。MWIR滤波器由于其在热成像、光谱学和传感领域的广泛应用而具有重要意义。本研究的主要目的是通过精确调谐光栅的结构参数来获得最大的优点系数(FOM)。首先,用有限元法模拟了不同结构在9 ~ 11µm波长范围内的透射光谱。光谱分析表明,随着不对称参数的变化,两种共振模式表现出不同的干涉行为。评估每种共振模式的关键参数,包括透射率、峰值波长、线宽和倾角深度,以计算质量因子(q因子)和FOM。为了优化FOM,采用了人工神经网络(ANN)拟合FEM数据和遗传算法(GA)直接优化两种方法。在最佳参数wsx = 80%, wsy = 10%, tsy = 10%, tsx = 80%时,ANN模型预测最大FOM为11.51 1/µm。随后,通过直接参数空间搜索,GA获得了13.55 1/µm的最优FOM,最佳参数为tsx = 86.98%, wsx = 65.39%, tsy = 45.76%, wsy = 31.45%。这些结果表明,精确调整非对称参数和采用适当的优化方法可以显著提高MWIR滤波器的性能和光谱分辨率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, Simulation, and Optimization of 3D Si/SiO2/Si Asymmetric Grating for Mid-InfraRed Filters

This paper investigates and optimizes mid-wave infrared (MWIR) optical filters based on three-dimensional asymmetric grating structures of Si/SiO2/Si. MWIR filters hold significant importance due to their extensive applications in thermal imaging, spectroscopy, and sensing. The primary aim of this study is to achieve the maximum figure of merit (FOM) through precise tuning of the grating's structural parameters. Initially, the transmission spectra of the filters in the 9–11 µm wavelength range were simulated for various structures using the finite element method (FEM). Analysis of these spectra revealed two resonance modes exhibiting different interference behaviors based on changes in asymmetry parameters. Key parameters of each resonance mode, including transmission, peak wavelength, linewidth, and dip depth, were evaluated to calculate quality factors (Q-factor) and FOM. To optimize the FOM, two approaches were employed: artificial neural network (ANN) fitting on FEM data and direct optimization using the genetic algorithm (GA). The ANN model predicted a maximum FOM of 11.51 1/µm with optimal parameters: wsx = 80%, wsy = 10%, tsy = 10%, and tsx = 80%. Subsequently, the GA achieved an optimal FOM of 13.55 1/µm through direct parameter space search, with the best parameters being tsx = 86.98%, wsx = 65.39%, tsy = 45.76%, and wsy = 31.45%. These findings demonstrate that precise tuning of asymmetry parameters and applying appropriate optimization methods can significantly enhance the performance of MWIR filters and improve their spectral resolution.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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