Enhancing solar cell efficiency through controlled aluminum doping in ZnS thin films: experimental and simulation study

This study re-calls into question the influence of aluminum doping concentration on the properties of ZnS thin films prepared using a cost-effective, straightforward, and efficient deposition method. Thin films with aluminum doping levels of 4%, 8%, and 12%, along with undoped ZnS, were deposited on glass substrates at 450°C using the ultrasonic-assisted chemical vapor deposition technique (Mist-CVD). The primary objective was to evaluate the effect of Al doping on the structural, morphological, optical, and electrical properties of ZnS:Al samples. Experimental investigations were complemented by numerical simulations using SCAPS-1D software. The structural and morphological analyses were conducted using X-ray diffraction (XRD) and scanning electron microscopy (SEM), while the optical and electrical properties were characterized using a UV–VIS spectrophotometer and Hall Effect Measurement System. Numerical simulations revealed an efficiency of 13.75% for the ZnS:Al(12%) sample, which improved to 17.31% after optimization. The findings demonstrate that the aluminum doping rate significantly affects the physical properties of the films, which in turn impacts the efficiency of solar cells. This research provides valuable insights into the role of doping concentration in optimizing ZnS films as a buffer layer to enhance solar cell performance.