Ashiq Ramzan, Mudasir Younis Sofi, Mohd Shahid Khan, Javid Ali, M. Ajmal Khan
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Optical analysis shows strong absorption in the visible–UV range, with absorption coefficients of <span>\\(\\sim\\)</span> 50 × 10<sup>4</sup> cm⁻<sup>1</sup> for MgAl<sub>2</sub>S<sub>4</sub> and <span>\\(\\sim\\)</span> 60 × 10<sup>4</sup> cm⁻<sup>1</sup> for MgAl<sub>2</sub>Se<sub>4</sub>. Elastic constants confirm mechanical stability and ductile behavior, while thermoelectric analysis reveals high Seebeck coefficients and figure of merit (zT) values of 0.96 and 0.95 for MgAl<sub>2</sub>S<sub>4</sub> and MgAl<sub>2</sub>Se<sub>4</sub>, respectively. 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引用次数: 0
摘要
镁基硫族化合物已成为光电和能量收集装置的有前途的候选者。在本研究中,我们利用密度泛函理论(DFT)研究了MgAl2X4 (X = S, Se)的结构、电子、光学、弹性和热电性质。结构优化证实了热力学稳定性,地层能分别为- 0.994 eV (MgAl2S4)和- 1.359 eV (MgAl2Se4)。改进的Becke-Johnson (mBJ)电位显示MgAl2S4的直接带隙为2.8 eV, MgAl2Se4为1.9 eV,适合光电应用。光学分析显示,MgAl2S4的吸收系数为\(\sim\) 50 × 104 cm - 1, MgAl2Se4的吸收系数为\(\sim\) 60 × 104 cm - 1。弹性常数证实了MgAl2S4和MgAl2Se4的力学稳定性和延性,而热电分析显示,MgAl2S4和MgAl2Se4的塞贝克系数和zT值分别为0.96和0.95。良好的电子、光学和热电性能的结合强调了MgAl2X4硫族化合物在光伏和热电器件中的先进应用潜力。图(a)显示了吸收系数,图(b)显示了300 K时的优值图,突出了材料在光电和热电应用中的适用性。
First-principles investigation of Mg-based MgAl2X4 (X = S, Se) spinels for optoelectronic and energy harvesting applications
Magnesium-based chalcogenides have emerged as promising candidates for optoelectronic and energy harvesting devices. In this study, we investigate the structural, electronic, optical, elastic, and thermoelectric properties of MgAl2X4 (X = S, Se) using density functional theory (DFT). Structural optimization confirms thermodynamic stability with negative formation energies of − 0.994 eV (MgAl2S4) and − 1.359 eV (MgAl2Se4). The modified Becke-Johnson (mBJ) potential reveals direct band gaps of 2.8 eV for MgAl2S4 and 1.9 eV for MgAl2Se4, suitable for optoelectronic applications. Optical analysis shows strong absorption in the visible–UV range, with absorption coefficients of \(\sim\) 50 × 104 cm⁻1 for MgAl2S4 and \(\sim\) 60 × 104 cm⁻1 for MgAl2Se4. Elastic constants confirm mechanical stability and ductile behavior, while thermoelectric analysis reveals high Seebeck coefficients and figure of merit (zT) values of 0.96 and 0.95 for MgAl2S4 and MgAl2Se4, respectively. The combination of favorable electronic, optical, and thermoelectric properties underscores the potential of MgAl2X4 chalcogenides for advanced applications in photovoltaics and thermoelectric devices.
Graphical abstract
Figure (a) shows the absorption coefficient, while Figure (b) presents the figure of merit at 300 K, highlighting the suitability of the materials for optoelectronic and thermoelectric applications.