Zhengcheng Xiao, Xiaohan Wan, Wenhui Ma, Shicong Yang
{"title":"加热器和保温环设计对大直径奇克拉尔斯基法生长硅氧含量的影响","authors":"Zhengcheng Xiao, Xiaohan Wan, Wenhui Ma, Shicong Yang","doi":"10.1007/s12633-025-03310-x","DOIUrl":null,"url":null,"abstract":"<div><p>Large-diameter monocrystalline silicon wafers with affordable costs dominate the photovoltaic market. Strict control of oxygen content has been proposed to improve quality of silicon wafers and to promote efficiency of solar cells. The aim of this study is to reduce oxygen by analyzing the effect of hot zone structure on oxygen concentration at the crystal-melt interface for 12-inch Czochralski silicon grown from 40-inch quartz crucible. The numerical simulation results show oxygen decreases with elevated heater position related to melt free surface and closer distance between heater and insulation ring. The main reasons are suppression of heat radiation from heater to crucible bottom, and enhancement of thermocapillary convection. With the optimized hot zone structure, lower oxygen content and more uniform axial oxygen distribution can be achieved, which will benefit Cz-Si producers.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1747 - 1756"},"PeriodicalIF":3.3000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Heater and Insulation Ring Designs on Oxygen Content of Large-Diameter Silicon Grown by Czochralski Method\",\"authors\":\"Zhengcheng Xiao, Xiaohan Wan, Wenhui Ma, Shicong Yang\",\"doi\":\"10.1007/s12633-025-03310-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Large-diameter monocrystalline silicon wafers with affordable costs dominate the photovoltaic market. Strict control of oxygen content has been proposed to improve quality of silicon wafers and to promote efficiency of solar cells. The aim of this study is to reduce oxygen by analyzing the effect of hot zone structure on oxygen concentration at the crystal-melt interface for 12-inch Czochralski silicon grown from 40-inch quartz crucible. The numerical simulation results show oxygen decreases with elevated heater position related to melt free surface and closer distance between heater and insulation ring. The main reasons are suppression of heat radiation from heater to crucible bottom, and enhancement of thermocapillary convection. With the optimized hot zone structure, lower oxygen content and more uniform axial oxygen distribution can be achieved, which will benefit Cz-Si producers.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 7\",\"pages\":\"1747 - 1756\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03310-x\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03310-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Effects of Heater and Insulation Ring Designs on Oxygen Content of Large-Diameter Silicon Grown by Czochralski Method
Large-diameter monocrystalline silicon wafers with affordable costs dominate the photovoltaic market. Strict control of oxygen content has been proposed to improve quality of silicon wafers and to promote efficiency of solar cells. The aim of this study is to reduce oxygen by analyzing the effect of hot zone structure on oxygen concentration at the crystal-melt interface for 12-inch Czochralski silicon grown from 40-inch quartz crucible. The numerical simulation results show oxygen decreases with elevated heater position related to melt free surface and closer distance between heater and insulation ring. The main reasons are suppression of heat radiation from heater to crucible bottom, and enhancement of thermocapillary convection. With the optimized hot zone structure, lower oxygen content and more uniform axial oxygen distribution can be achieved, which will benefit Cz-Si producers.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.