Beatriz Orfao, Amir Al Abdallah, Hugo Bouillaud, Guillaume Ducournau, Yannick Roelens, Malek Zegaoui, Mohammed Zaknoune
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Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications
In this paper, we report the investigation of the thermal enhancement and the behaviour of GaN Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates for RF power applications and their potential to operate under extreme temperatures. The Schottky barrier diodes show a Schottky barrier height (ϕB) close to 0.93 eV and an ideality factor (η) near unity, with 1.03. Pt/Au anodes annealed at 500°C and 600°C show an improvement in the electrical characteristics and a breakdown voltage as high as 130 V for a drift layer thickness of 1 µm and doping of 1016 cm−3.
期刊介绍:
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
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