{"title":"介质绝缘和保护层对233nm远紫外线led的影响","authors":"Hyun Kyong Cho;Jens Rass;Jan Ruschel;Ina Ostermay;Ali Koyucuoglu;Jos E. Boschker;Tim Kolbe;Sven Einfeldt","doi":"10.1109/LPT.2025.3562622","DOIUrl":null,"url":null,"abstract":"This letter investigates the effect of dielectric insulation or protection layers such as SiO<inline-formula> <tex-math>${}_{\\mathbf {2}}$ </tex-math></inline-formula> and SiN<inline-formula> <tex-math>${}_{\\mathbf {x}}$ </tex-math></inline-formula> on the performance and reliability of 233 nm far-UVC LEDs. The study includes the effect of n-contact annealing of chips with these layers. Results show that introducing a protection of the p-GaN surface and mesa edges by SiO<inline-formula> <tex-math>${}_{\\mathbf {2}}$ </tex-math></inline-formula> and combining it with an insulation by SiN<inline-formula> <tex-math>${}_{\\mathbf {x}}$ </tex-math></inline-formula> enhances the device performance. LEDs with a SiO<inline-formula> <tex-math>${}_{\\mathbf {2}}$ </tex-math></inline-formula> protection layer that undergoes an n-contact annealing at <inline-formula> <tex-math>$700~^{\\circ }$ </tex-math></inline-formula>C offer minimum leakage and degradation.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 15","pages":"829-832"},"PeriodicalIF":2.3000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs\",\"authors\":\"Hyun Kyong Cho;Jens Rass;Jan Ruschel;Ina Ostermay;Ali Koyucuoglu;Jos E. Boschker;Tim Kolbe;Sven Einfeldt\",\"doi\":\"10.1109/LPT.2025.3562622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter investigates the effect of dielectric insulation or protection layers such as SiO<inline-formula> <tex-math>${}_{\\\\mathbf {2}}$ </tex-math></inline-formula> and SiN<inline-formula> <tex-math>${}_{\\\\mathbf {x}}$ </tex-math></inline-formula> on the performance and reliability of 233 nm far-UVC LEDs. The study includes the effect of n-contact annealing of chips with these layers. Results show that introducing a protection of the p-GaN surface and mesa edges by SiO<inline-formula> <tex-math>${}_{\\\\mathbf {2}}$ </tex-math></inline-formula> and combining it with an insulation by SiN<inline-formula> <tex-math>${}_{\\\\mathbf {x}}$ </tex-math></inline-formula> enhances the device performance. LEDs with a SiO<inline-formula> <tex-math>${}_{\\\\mathbf {2}}$ </tex-math></inline-formula> protection layer that undergoes an n-contact annealing at <inline-formula> <tex-math>$700~^{\\\\circ }$ </tex-math></inline-formula>C offer minimum leakage and degradation.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 15\",\"pages\":\"829-832\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10971409/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10971409/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs
This letter investigates the effect of dielectric insulation or protection layers such as SiO${}_{\mathbf {2}}$ and SiN${}_{\mathbf {x}}$ on the performance and reliability of 233 nm far-UVC LEDs. The study includes the effect of n-contact annealing of chips with these layers. Results show that introducing a protection of the p-GaN surface and mesa edges by SiO${}_{\mathbf {2}}$ and combining it with an insulation by SiN${}_{\mathbf {x}}$ enhances the device performance. LEDs with a SiO${}_{\mathbf {2}}$ protection layer that undergoes an n-contact annealing at $700~^{\circ }$ C offer minimum leakage and degradation.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.