基于嵌入结构的高性能薄膜铌酸锂电光调制器

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-04-15 DOI:10.1109/LPT.2025.3561110

Shuxiang Song;Haisheng Li;Jiayu Yang;Yihui Yin;Wanli Yang;Yue Li;Hangyu Li;Mingcan Cen

{"title":"基于嵌入结构的高性能薄膜铌酸锂电光调制器","authors":"Shuxiang Song;Haisheng Li;Jiayu Yang;Yihui Yin;Wanli Yang;Yue Li;Hangyu Li;Mingcan Cen","doi":"10.1109/LPT.2025.3561110","DOIUrl":null,"url":null,"abstract":"Electro-optic modulators with low driving voltage and wide bandwidth are critical for advanced analog and digital communication systems. Improving the modulation efficiency of thin-film lithium niobate (TFLN) modulators is essential to reducing drive voltage and device length, thereby enabling compact chip integration and enhanced modulation bandwidth. This work introduces a novel TFLN modulator featuring an embedded dual capacitance-loaded traveling-wave electrode (EDC-TWE) to achieve superior electro-optic modulation efficiency and minimized optical loss. The fabricated modulator, with a 10-mm-long modulation region, achieves a half-wave voltage of 1.45 V and an electro-optic modulation bandwidth exceeding 40 GHz, demonstrating its potential for high-performance optical communication applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 13","pages":"701-704"},"PeriodicalIF":2.3000,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Performance Thin Film Lithium Niobate Electro-Optic Modulator By Embedding Structure\",\"authors\":\"Shuxiang Song;Haisheng Li;Jiayu Yang;Yihui Yin;Wanli Yang;Yue Li;Hangyu Li;Mingcan Cen\",\"doi\":\"10.1109/LPT.2025.3561110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electro-optic modulators with low driving voltage and wide bandwidth are critical for advanced analog and digital communication systems. Improving the modulation efficiency of thin-film lithium niobate (TFLN) modulators is essential to reducing drive voltage and device length, thereby enabling compact chip integration and enhanced modulation bandwidth. This work introduces a novel TFLN modulator featuring an embedded dual capacitance-loaded traveling-wave electrode (EDC-TWE) to achieve superior electro-optic modulation efficiency and minimized optical loss. The fabricated modulator, with a 10-mm-long modulation region, achieves a half-wave voltage of 1.45 V and an electro-optic modulation bandwidth exceeding 40 GHz, demonstrating its potential for high-performance optical communication applications.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 13\",\"pages\":\"701-704\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10965718/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10965718/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

具有低驱动电压和宽带宽的电光调制器对于先进的模拟和数字通信系统至关重要。提高薄膜铌酸锂（TFLN）调制器的调制效率对于降低驱动电压和器件长度至关重要，从而实现紧凑的芯片集成和增强调制带宽。本文介绍了一种新型的TFLN调制器，该调制器采用嵌入式双电容负载行波电极（EDC-TWE）来实现优越的电光调制效率和最小的光损耗。该调制器具有10mm长的调制区域，实现了1.45 V的半波电压和超过40 GHz的电光调制带宽，显示了其在高性能光通信应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-Performance Thin Film Lithium Niobate Electro-Optic Modulator By Embedding Structure

Electro-optic modulators with low driving voltage and wide bandwidth are critical for advanced analog and digital communication systems. Improving the modulation efficiency of thin-film lithium niobate (TFLN) modulators is essential to reducing drive voltage and device length, thereby enabling compact chip integration and enhanced modulation bandwidth. This work introduces a novel TFLN modulator featuring an embedded dual capacitance-loaded traveling-wave electrode (EDC-TWE) to achieve superior electro-optic modulation efficiency and minimized optical loss. The fabricated modulator, with a 10-mm-long modulation region, achieves a half-wave voltage of 1.45 V and an electro-optic modulation bandwidth exceeding 40 GHz, demonstrating its potential for high-performance optical communication applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.