{"title":"面向高性能紫外光探测的二维钙钛矿氧化物","authors":"Ming Deng, and , Xiaosheng Fang*, ","doi":"10.1021/accountsmr.5c0001410.1021/accountsmr.5c00014","DOIUrl":null,"url":null,"abstract":"<p >Ultraviolet (UV) light, spanning wavelengths from 10 to 400 nm, is ubiquitous in military, livelihood, and scientific domains. Accurate UV photodetection is therefore essential for monitoring environmental radiation, safeguarding human health, and advancing technological applications in fields such as aerospace, medical science, and ecology. The fabrication of high-performance UV photodetection devices fundamentally depends on the development of high-sensitivity UV photosensitive materials. The evolution of UV photodetection materials has progressed from early wide-bandgap semiconductors like ZnS and ZnSe to third-generation semiconductors such as GaN and Ga<sub>2</sub>O<sub>3</sub>, and most recently to two-dimensional (2D) wide-bandgap materials that combine exceptional optoelectronic properties with compelling physicochemical properties. Among these, 2D perovskite oxides stand out due to their prominent advantages for UV detection. First, this large family of materials generally features wide bandgaps, strong UV absorption, and high spectral selectivity. Second, the tunable bandgaps of 2D perovskite oxides enable precise detection at specific wavelengths. Third, their excellent processability and flexibility facilitate feasible integration into devices, making them promising candidates for flexible photodetectors. Furthermore, 2D perovskite oxides boast other properties such as high stability, dielectricity, ferroelectricity, and biocompatibility. These characteristics have promoted the blossoming of 2D perovskite oxides for high-performance UV photodetection and are poised to expand their applications in novel functional optoelectronics.</p><p >In this Account, we systematically review the development of 2D perovskite oxides, with a focus on their application in the fabrication of high-performance UV photodetectors. First, we describe the top-down synthesis of these materials, highlighting key advances in synthesis techniques. Second, we specifically analyze the intrinsic advantages of 2D perovskite oxides which render them highly suitable for UV detection. Third, we discuss recent progress in the fabrication of UV photodetectors based on 2D perovskite oxides, emphasizing effective strategies for achieving high-performance devices. Next, we explore state-of-the-art optoelectronic applications leveraging these materials. Finally, we present our perspectives on the future development of this promising class of UV-sensitive materials. Given their remarkable material diversity, we believe that this Account will provide valuable insights to guide future research and the application of 2D perovskite oxides in high-performance UV photodetectors and functional optoelectronics.</p>","PeriodicalId":72040,"journal":{"name":"Accounts of materials research","volume":"6 5","pages":"615–626 615–626"},"PeriodicalIF":14.0000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2D Perovskite Oxides toward High-Performance Ultraviolet Photodetection\",\"authors\":\"Ming Deng, and , Xiaosheng Fang*, \",\"doi\":\"10.1021/accountsmr.5c0001410.1021/accountsmr.5c00014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Ultraviolet (UV) light, spanning wavelengths from 10 to 400 nm, is ubiquitous in military, livelihood, and scientific domains. Accurate UV photodetection is therefore essential for monitoring environmental radiation, safeguarding human health, and advancing technological applications in fields such as aerospace, medical science, and ecology. The fabrication of high-performance UV photodetection devices fundamentally depends on the development of high-sensitivity UV photosensitive materials. The evolution of UV photodetection materials has progressed from early wide-bandgap semiconductors like ZnS and ZnSe to third-generation semiconductors such as GaN and Ga<sub>2</sub>O<sub>3</sub>, and most recently to two-dimensional (2D) wide-bandgap materials that combine exceptional optoelectronic properties with compelling physicochemical properties. Among these, 2D perovskite oxides stand out due to their prominent advantages for UV detection. First, this large family of materials generally features wide bandgaps, strong UV absorption, and high spectral selectivity. Second, the tunable bandgaps of 2D perovskite oxides enable precise detection at specific wavelengths. Third, their excellent processability and flexibility facilitate feasible integration into devices, making them promising candidates for flexible photodetectors. Furthermore, 2D perovskite oxides boast other properties such as high stability, dielectricity, ferroelectricity, and biocompatibility. These characteristics have promoted the blossoming of 2D perovskite oxides for high-performance UV photodetection and are poised to expand their applications in novel functional optoelectronics.</p><p >In this Account, we systematically review the development of 2D perovskite oxides, with a focus on their application in the fabrication of high-performance UV photodetectors. First, we describe the top-down synthesis of these materials, highlighting key advances in synthesis techniques. Second, we specifically analyze the intrinsic advantages of 2D perovskite oxides which render them highly suitable for UV detection. Third, we discuss recent progress in the fabrication of UV photodetectors based on 2D perovskite oxides, emphasizing effective strategies for achieving high-performance devices. Next, we explore state-of-the-art optoelectronic applications leveraging these materials. Finally, we present our perspectives on the future development of this promising class of UV-sensitive materials. Given their remarkable material diversity, we believe that this Account will provide valuable insights to guide future research and the application of 2D perovskite oxides in high-performance UV photodetectors and functional optoelectronics.</p>\",\"PeriodicalId\":72040,\"journal\":{\"name\":\"Accounts of materials research\",\"volume\":\"6 5\",\"pages\":\"615–626 615–626\"},\"PeriodicalIF\":14.0000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of materials research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/accountsmr.5c00014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of materials research","FirstCategoryId":"1085","ListUrlMain":"https://pubs.acs.org/doi/10.1021/accountsmr.5c00014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Ultraviolet (UV) light, spanning wavelengths from 10 to 400 nm, is ubiquitous in military, livelihood, and scientific domains. Accurate UV photodetection is therefore essential for monitoring environmental radiation, safeguarding human health, and advancing technological applications in fields such as aerospace, medical science, and ecology. The fabrication of high-performance UV photodetection devices fundamentally depends on the development of high-sensitivity UV photosensitive materials. The evolution of UV photodetection materials has progressed from early wide-bandgap semiconductors like ZnS and ZnSe to third-generation semiconductors such as GaN and Ga2O3, and most recently to two-dimensional (2D) wide-bandgap materials that combine exceptional optoelectronic properties with compelling physicochemical properties. Among these, 2D perovskite oxides stand out due to their prominent advantages for UV detection. First, this large family of materials generally features wide bandgaps, strong UV absorption, and high spectral selectivity. Second, the tunable bandgaps of 2D perovskite oxides enable precise detection at specific wavelengths. Third, their excellent processability and flexibility facilitate feasible integration into devices, making them promising candidates for flexible photodetectors. Furthermore, 2D perovskite oxides boast other properties such as high stability, dielectricity, ferroelectricity, and biocompatibility. These characteristics have promoted the blossoming of 2D perovskite oxides for high-performance UV photodetection and are poised to expand their applications in novel functional optoelectronics.
In this Account, we systematically review the development of 2D perovskite oxides, with a focus on their application in the fabrication of high-performance UV photodetectors. First, we describe the top-down synthesis of these materials, highlighting key advances in synthesis techniques. Second, we specifically analyze the intrinsic advantages of 2D perovskite oxides which render them highly suitable for UV detection. Third, we discuss recent progress in the fabrication of UV photodetectors based on 2D perovskite oxides, emphasizing effective strategies for achieving high-performance devices. Next, we explore state-of-the-art optoelectronic applications leveraging these materials. Finally, we present our perspectives on the future development of this promising class of UV-sensitive materials. Given their remarkable material diversity, we believe that this Account will provide valuable insights to guide future research and the application of 2D perovskite oxides in high-performance UV photodetectors and functional optoelectronics.