{"title":"ZnGa2Se4单晶光学性质的系统分析","authors":"S.G. Asadullayeva , Z.А. Jahangirli , T.G. Naghiyev , A.S. Abiyev","doi":"10.1016/j.cap.2025.05.007","DOIUrl":null,"url":null,"abstract":"<div><div>The single crystals of ZnGa<sub>2</sub>Se<sub>4</sub> compound were grown by gas transportation method. Photoluminescence (PL), photoconductivity (PC) properties was experimentally investigated. PL emission measurements in wide range of temperature (5–300 K) shown that the intensity of PL emission peak increase with decreasing the temperature. Simultaneously, blue shifts from 536 nm (2.31 eV) to 530 nm (2.34 eV) is observed at PL maxima by decreasing the temperature. Moreover, a strong PL peak with maximum at 1600 nm (0.77 eV) associated with an electronic transition from the acceptor level to the valence band is observed for the first time. The DFT calculations confirmed that PL excitation (PLE) peak at 2.83 eV can be associated with the electronic transition from the VBM to the CBM. Obtained experimental data and ab initio calculations for ZnGa<sub>2</sub>Se<sub>4</sub> single crystals show good agreement. In general, experimental results were confirmed by ab-initio calculations.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"76 ","pages":"Pages 39-44"},"PeriodicalIF":2.4000,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Systematic analysis of the optical properties of ZnGa2Se4 single crystal\",\"authors\":\"S.G. Asadullayeva , Z.А. Jahangirli , T.G. Naghiyev , A.S. Abiyev\",\"doi\":\"10.1016/j.cap.2025.05.007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The single crystals of ZnGa<sub>2</sub>Se<sub>4</sub> compound were grown by gas transportation method. Photoluminescence (PL), photoconductivity (PC) properties was experimentally investigated. PL emission measurements in wide range of temperature (5–300 K) shown that the intensity of PL emission peak increase with decreasing the temperature. Simultaneously, blue shifts from 536 nm (2.31 eV) to 530 nm (2.34 eV) is observed at PL maxima by decreasing the temperature. Moreover, a strong PL peak with maximum at 1600 nm (0.77 eV) associated with an electronic transition from the acceptor level to the valence band is observed for the first time. The DFT calculations confirmed that PL excitation (PLE) peak at 2.83 eV can be associated with the electronic transition from the VBM to the CBM. Obtained experimental data and ab initio calculations for ZnGa<sub>2</sub>Se<sub>4</sub> single crystals show good agreement. In general, experimental results were confirmed by ab-initio calculations.</div></div>\",\"PeriodicalId\":11037,\"journal\":{\"name\":\"Current Applied Physics\",\"volume\":\"76 \",\"pages\":\"Pages 39-44\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2025-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Current Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1567173925001051\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173925001051","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Systematic analysis of the optical properties of ZnGa2Se4 single crystal
The single crystals of ZnGa2Se4 compound were grown by gas transportation method. Photoluminescence (PL), photoconductivity (PC) properties was experimentally investigated. PL emission measurements in wide range of temperature (5–300 K) shown that the intensity of PL emission peak increase with decreasing the temperature. Simultaneously, blue shifts from 536 nm (2.31 eV) to 530 nm (2.34 eV) is observed at PL maxima by decreasing the temperature. Moreover, a strong PL peak with maximum at 1600 nm (0.77 eV) associated with an electronic transition from the acceptor level to the valence band is observed for the first time. The DFT calculations confirmed that PL excitation (PLE) peak at 2.83 eV can be associated with the electronic transition from the VBM to the CBM. Obtained experimental data and ab initio calculations for ZnGa2Se4 single crystals show good agreement. In general, experimental results were confirmed by ab-initio calculations.
期刊介绍:
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.