Ferroelectric Polarization Enhanced Performance and Broadband Photodetector for Neural Network Recognition

The polarization electric field provided by ferroelectric materials can achieve precise control of the carrier concentration in van der Waals semiconductors, providing a more flexible, convenient, and efficient new approach for improving the performance and intelligent application of photodetectors. The UV-midinfrared photodetector with a sandwich structure of ${\text{BP/MoS}}_2$/CIPS, leverages the spontaneous polarization and ${\text{Cu}}^{+}$ ion migration within CIPS to modify the electric dipole moment at the interface between BP and ${\text{MoS}}_2$. This modification induces changes in the built-in electric field between BP and ${\text{MoS}}_2$, facilitating carrier separation and migration, thereby suppressing dark current and enhancing detectivity. Through gate voltage control, the device achieves an order-of-magnitude improvement in photocurrent, which demonstrates high specific blackbody detectivity, reaching up to 1.17 $\times {10}^{10}$ cm in the infrared region. Furthermore, high-resolution images of letters are achieved by the ${\text{BP/MoS}}_2$/CIPS-based ferroelectric photodetectors. The devices achieve accurate image recognition by applying deep learning techniques. This work not only highlights the potential of CIPS-based device for high-sensitivity and broadband detection but also offers a new approach to neuromorphic computing applications.