Wenchao Zhao, Xiaowei Lv, Qianqian Xu, Zhengji Wen, Yuchuan Shao, Changlong Liu and Ning Dai
{"title":"基于石墨烯和氧化钒双可调结构的多功能太赫兹超材料器件。","authors":"Wenchao Zhao, Xiaowei Lv, Qianqian Xu, Zhengji Wen, Yuchuan Shao, Changlong Liu and Ning Dai","doi":"10.1039/D5NA00278H","DOIUrl":null,"url":null,"abstract":"<p >This paper presents a multifunctional terahertz device based on a dual-tunable structure incorporating graphene and vanadium oxide (VO<small><sub>2</sub></small>). This device enables the switching between narrowband perfect absorption and ultra-broadband performance through the phase transition characteristics of VO<small><sub>2</sub></small> and the adjustment of graphene Fermi level. Simulation results demonstrate that when VO<small><sub>2</sub></small> is in its metallic state, the THz device exhibits ultra-broadband absorption, achieving a high absorption rate exceeding 0.9 within the frequency range of 2.9–7.67 THz. Conversely, when VO<small><sub>2</sub></small> is in its insulating state, the THz device displays perfect absorption peaks at 2.8 and 8.41 THz. In the broadband mode, the absorption band can be broadened to an ultra-broadband range by adjusting the Fermi level of graphene. Furthermore, the structural parameters of terahertz devices, as well as the incident and polarization angles of electromagnetic waves, were investigated. The results demonstrated that the terahertz devices exhibit a certain degree of manufacturing tolerance, stability against variations in incident angles, and favorable polarization insensitivity. Overall, this design holds promising application prospects in fields such as terahertz absorption, refractive index sensing, and terahertz detection.</p>","PeriodicalId":18806,"journal":{"name":"Nanoscale Advances","volume":" 12","pages":" 3817-3827"},"PeriodicalIF":4.6000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12086444/pdf/","citationCount":"0","resultStr":"{\"title\":\"Multifunctional terahertz metamaterials device based on a dual-tunable structure incorporating graphene and vanadium oxide\",\"authors\":\"Wenchao Zhao, Xiaowei Lv, Qianqian Xu, Zhengji Wen, Yuchuan Shao, Changlong Liu and Ning Dai\",\"doi\":\"10.1039/D5NA00278H\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >This paper presents a multifunctional terahertz device based on a dual-tunable structure incorporating graphene and vanadium oxide (VO<small><sub>2</sub></small>). This device enables the switching between narrowband perfect absorption and ultra-broadband performance through the phase transition characteristics of VO<small><sub>2</sub></small> and the adjustment of graphene Fermi level. Simulation results demonstrate that when VO<small><sub>2</sub></small> is in its metallic state, the THz device exhibits ultra-broadband absorption, achieving a high absorption rate exceeding 0.9 within the frequency range of 2.9–7.67 THz. Conversely, when VO<small><sub>2</sub></small> is in its insulating state, the THz device displays perfect absorption peaks at 2.8 and 8.41 THz. In the broadband mode, the absorption band can be broadened to an ultra-broadband range by adjusting the Fermi level of graphene. Furthermore, the structural parameters of terahertz devices, as well as the incident and polarization angles of electromagnetic waves, were investigated. The results demonstrated that the terahertz devices exhibit a certain degree of manufacturing tolerance, stability against variations in incident angles, and favorable polarization insensitivity. Overall, this design holds promising application prospects in fields such as terahertz absorption, refractive index sensing, and terahertz detection.</p>\",\"PeriodicalId\":18806,\"journal\":{\"name\":\"Nanoscale Advances\",\"volume\":\" 12\",\"pages\":\" 3817-3827\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12086444/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale Advances\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/na/d5na00278h\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale Advances","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/na/d5na00278h","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Multifunctional terahertz metamaterials device based on a dual-tunable structure incorporating graphene and vanadium oxide
This paper presents a multifunctional terahertz device based on a dual-tunable structure incorporating graphene and vanadium oxide (VO2). This device enables the switching between narrowband perfect absorption and ultra-broadband performance through the phase transition characteristics of VO2 and the adjustment of graphene Fermi level. Simulation results demonstrate that when VO2 is in its metallic state, the THz device exhibits ultra-broadband absorption, achieving a high absorption rate exceeding 0.9 within the frequency range of 2.9–7.67 THz. Conversely, when VO2 is in its insulating state, the THz device displays perfect absorption peaks at 2.8 and 8.41 THz. In the broadband mode, the absorption band can be broadened to an ultra-broadband range by adjusting the Fermi level of graphene. Furthermore, the structural parameters of terahertz devices, as well as the incident and polarization angles of electromagnetic waves, were investigated. The results demonstrated that the terahertz devices exhibit a certain degree of manufacturing tolerance, stability against variations in incident angles, and favorable polarization insensitivity. Overall, this design holds promising application prospects in fields such as terahertz absorption, refractive index sensing, and terahertz detection.