氧空位诱导2D Bi2SeO5非易失性忆阻器1T1R集成

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-05-12 DOI:10.1021/acs.nanolett.5c0134510.1021/acs.nanolett.5c01345

Tingting Guo, Zhidong Pan, Yehui Shen, Jialin Yang, Chuyao Chen, Yunhai Xiong, Xuan Chen, Yang Song, Nengjie Huo, Rongqing Xu, Gangyi Zhu, Guangxu Shen, Xiang Chen, Shengli Zhang*, Xiufeng Song* and Haibo Zeng*,

{"title":"氧空位诱导2D Bi2SeO5非易失性忆阻器1T1R集成","authors":"Tingting Guo, Zhidong Pan, Yehui Shen, Jialin Yang, Chuyao Chen, Yunhai Xiong, Xuan Chen, Yang Song, Nengjie Huo, Rongqing Xu, Gangyi Zhu, Guangxu Shen, Xiang Chen, Shengli Zhang*, Xiufeng Song* and Haibo Zeng*, ","doi":"10.1021/acs.nanolett.5c0134510.1021/acs.nanolett.5c01345","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) layered Bi2SeO5, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi2SeO5 nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi2SeO5 memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 1010), an extremely low off-state current (10–12 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS2 transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 20","pages":"8258–8266 8258–8266"},"PeriodicalIF":9.1000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Oxygen Vacancy Induced 2D Bi2SeO5 Non-Volatile Memristor for 1T1R Integration\",\"authors\":\"Tingting Guo, Zhidong Pan, Yehui Shen, Jialin Yang, Chuyao Chen, Yunhai Xiong, Xuan Chen, Yang Song, Nengjie Huo, Rongqing Xu, Gangyi Zhu, Guangxu Shen, Xiang Chen, Shengli Zhang*, Xiufeng Song* and Haibo Zeng*, \",\"doi\":\"10.1021/acs.nanolett.5c0134510.1021/acs.nanolett.5c01345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional (2D) layered Bi2SeO5, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi2SeO5 nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi2SeO5 memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 1010), an extremely low off-state current (10–12 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS2 transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"25 20\",\"pages\":\"8258–8266 8258–8266\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.nanolett.5c01345\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.5c01345","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

二维（2D）层状Bi2SeO5是一种新型的高k氧化物材料，在提高忆阻器性能方面显示出相当大的潜力。在这项研究中，高结晶度的二维Bi2SeO5纳米片被成功剥离，表明氧空位诱导的Bi2SeO5忆阻器具有优越的非挥发性特性。具体来说，这些忆阻器具有超高的开/关比（高达1010），极低的关断电流（10-12 A）和快速的开关速度（SET为160 ns， RESET为110 ns）。此外，忆阻器表现出优异的保持和持久能力。此外，通过集成SnS2晶体管，构建了1T1R（一晶体管一电阻）结构，简化了电路设计，实现了与门逻辑和多值逻辑存储功能。这项工作为二维高性能氧化物忆阻器在未来高密度集成和快速内存计算系统中的实际应用奠定了坚实的基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Oxygen Vacancy Induced 2D Bi2SeO5 Non-Volatile Memristor for 1T1R Integration

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Oxygen Vacancy Induced 2D Bi2SeO5 Non-Volatile Memristor for 1T1R Integration

Two-dimensional (2D) layered Bi₂SeO₅, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi₂SeO₅ nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi₂SeO₅ memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 10¹⁰), an extremely low off-state current (10^–12 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS₂ transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.