对“非晶二氧化硅中间层通过滑粘机制解锁CsPbBr3在硅上的直接外延生长”的修正

IF 4.8 2区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry Letters Pub Date : 2025-05-19 DOI:10.1021/acs.jpclett.5c00586

Christian Tantardini, Simone Argiolas, Paola De Padova, Boris I. Yakobson, Aldo Di Carlo, Alessandro Mattoni

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引用次数: 0

摘要

这篇文章的原始版本在引用的文献中有几个错误。已替换参考文献（14−21、23、27−29、31−34、43、46、49−52）和（60−63）。以下是更正后的参考书目。（1−63）参考文献63篇。第四届MBE和VPE生长，物理，技术研讨会论文集本文尚未被其他出版物引用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Correction to “Amorphous Silica Interlayer Unlocks Direct Epitaxial Growth of CsPbBr3 on Silicon via Slip-and-Stick Mechanism”

The original version of this Article contained several errors in the cited literature. References (14−21,23,27−29,31−34,43,46,49−52), and (60−63) have been replaced. Following is the corrected reference list. (1−63) This article references 63 other publications. Proceedings of the fourth Workshop on MBE and VPE Growth, Physics, Technology This article has not yet been cited by other publications.

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来源期刊

The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

9.60

自引率

7.00%

发文量

1519

审稿时长

1.6 months

期刊介绍： The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.