高性能金属半导体光电探测器用rf溅射CdS薄膜的纳米级表面粗糙度、分形生长、光学常数和色散参数研究

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sakshi Pathak, Shristi Chaudhary, Monika Shrivastav, Jiten Yadav, Shivam Shukla, Ştefan Ţălu, Naveen Kumar, Fernando Guzman, Sanjeev Kumar, Chandra Kumar
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引用次数: 0

摘要

分形维数是最重要的参数,它提供了一种量化表面的不规则性、复杂性等研究的方法,对于理解其对光学和光电探测器器件性能的影响非常重要。本文报道了利用射频磁控溅射在fto镀膜玻璃基板上沉积CdS薄膜的方法。采用场发射扫描电镜(FESEM)图像计算颗粒尺寸。分形参数采用高度-高度相关函数(HHCF)算法计算。分形维数随沉积时间的增加而减小,较低沉积时间的样品呈现出最不规则的形貌(Df = 2.21±0.03)。光学研究表明,光学带隙从2.38 eV减小到2.36 eV。此外,利用Wemple-DiDomenico (WDD)方法提取了薄膜的振子能量E0和色散能量Ed等色散能参数。色散能在11.23 ~ 15.39 eV之间,振荡能在4.32 ~ 4.08 eV之间。此外,我们还通过测量电流-电压(I-V)来探索所设计的探测器器件的详细光电探测器特性。在这里,我们观察到光电探测器的参数,如灵敏度、响应率和探测率受薄膜厚度的影响。所设计的光电探测器器件在1v偏置下的最大响应度为0.79 mAW−1,在532 nm光照下的光电探测率为8.4 × 1010 Jones。所制备的光电探测器具有光响应好、时间响应快、随时间重现性高等特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of nanoscale surface roughness, fractal growth, optical constant and dispersion parameters of rf-sputtered CdS thin films for high-performance metal–semiconductor photodetector

The fractal dimension is most significant parameters that provides a way to quantify the irregularities, complexity of surface and such studied that are very important in understanding its impact on performance of optical and designed photodetector device. Herein, we report the deposition of CdS thin films on FTO-coated glass substrates via RF magnetron sputtering. Field emission scanning electron microscopy (FESEM) images were used to calculate particle size. The fractal parameters were computed height-height correlation function (HHCF) algorithms. It was observed that fractal dimension values decreased with increasing deposition time, with samples at lower deposition times exhibiting the most irregular topographical surface (Df = 2.21 ± 0.03). The optical study showed a decrease in the optical band gap from 2.38 to 2.36 eV. Moreover, the Wemple-DiDomenico (WDD) approach was used to extract dispersion energy parameters such as the oscillator energy (E0) and dispersion energy (Ed) of the thin films. The dispersion energies ranged from 11.23 to 15.39 eV, while the oscillator energies of the deposited films ranged from 4.32 to 4.08 eV. In addition, we have explored the detailed photodetector characteristics of the designed detector device through current–voltage (I–V) measurement. Here, it was observed that the photodetector parameters such as, sensitivity, responsivity, and detectivity are influenced with film thickness. The designed photodetector device at 1 V bias exhibits the maximum responsivity of 0.79 mAW−1, and a photo-detectivity of 8.4 × 1010 Jones under 532 nm illumination. The fabricated photodetector showed a good photo response, a fast time response, and high reproducibility with time.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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