Dhara Singh Meena, Madhu Yadav, Chhagan Lal, M. K. Jangid
{"title":"研究了退火对电子束沉积NiO/Co/Zn薄膜结构、光学和表面形貌的影响","authors":"Dhara Singh Meena, Madhu Yadav, Chhagan Lal, M. K. Jangid","doi":"10.1007/s00339-025-08533-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this study the effect of annealing on structural, optical and surface morphological properties of NiO/Co/Zn thin films were investigated. NiO/Co/Zn thin films were deposited onto the glass substrate using e-beam deposition technique. The prepared thin films were then vacuum annealed at two different temperatures (300 °C and 400 °C) to assess the impact of annealing on their properties. The presence of the cubic NiO phase was verified using X-ray diffraction (XRD) analysis, with enhanced grain growth and improved crystallinity observed at higher annealing temperature (400 °C). UV–Vis spectroscopy was revealed a notable increase in emission intensity with annealing, particularly at 400 °C, suggesting reduced non-radiative recombination and improved electron–hole pair recombination efficiency. The energy bandgap of the films decreased from 4.34 eV (as-deposited) to 4.15 eV (annealing at 400 °C). This reduction into bandgap is attributed to improved crystallinity and fewer structural defects, enhancing photon absorption in the visible spectrum. Atomic force microscopy (AFM) provided insights into surface morphology. A noticeable transformation in grain size and surface features was observed as the annealing temperature increased. The FE-SEM images indicate that films were uniformly deposited across the substrate, exhibiting excellent adhesion. The presence of specific peaks in the EDX spectra for Ni, Co and Zn corroborates the successful deposition of Co and Zn alongside NiO. Hall Effect measurements were revealed the conductivity of the thin film experiences a notable rise from 1.38 Ω⁻<sup>1</sup> cm⁻<sup>1</sup> to 96.94 Ω⁻<sup>1</sup> cm⁻<sup>1</sup> after annealing. The findings confirm that annealing significantly enhances the structural, optical and surface morphological properties of NiO/Co/Zn thin films.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 6","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigate the annealing effect on structural, optical and surface morphological properties of NiO/Co/Zn thin films prepared by e-beam deposition\",\"authors\":\"Dhara Singh Meena, Madhu Yadav, Chhagan Lal, M. K. Jangid\",\"doi\":\"10.1007/s00339-025-08533-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study the effect of annealing on structural, optical and surface morphological properties of NiO/Co/Zn thin films were investigated. NiO/Co/Zn thin films were deposited onto the glass substrate using e-beam deposition technique. The prepared thin films were then vacuum annealed at two different temperatures (300 °C and 400 °C) to assess the impact of annealing on their properties. The presence of the cubic NiO phase was verified using X-ray diffraction (XRD) analysis, with enhanced grain growth and improved crystallinity observed at higher annealing temperature (400 °C). UV–Vis spectroscopy was revealed a notable increase in emission intensity with annealing, particularly at 400 °C, suggesting reduced non-radiative recombination and improved electron–hole pair recombination efficiency. The energy bandgap of the films decreased from 4.34 eV (as-deposited) to 4.15 eV (annealing at 400 °C). This reduction into bandgap is attributed to improved crystallinity and fewer structural defects, enhancing photon absorption in the visible spectrum. Atomic force microscopy (AFM) provided insights into surface morphology. A noticeable transformation in grain size and surface features was observed as the annealing temperature increased. The FE-SEM images indicate that films were uniformly deposited across the substrate, exhibiting excellent adhesion. The presence of specific peaks in the EDX spectra for Ni, Co and Zn corroborates the successful deposition of Co and Zn alongside NiO. Hall Effect measurements were revealed the conductivity of the thin film experiences a notable rise from 1.38 Ω⁻<sup>1</sup> cm⁻<sup>1</sup> to 96.94 Ω⁻<sup>1</sup> cm⁻<sup>1</sup> after annealing. The findings confirm that annealing significantly enhances the structural, optical and surface morphological properties of NiO/Co/Zn thin films.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":\"131 6\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-025-08533-8\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-025-08533-8","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Investigate the annealing effect on structural, optical and surface morphological properties of NiO/Co/Zn thin films prepared by e-beam deposition
In this study the effect of annealing on structural, optical and surface morphological properties of NiO/Co/Zn thin films were investigated. NiO/Co/Zn thin films were deposited onto the glass substrate using e-beam deposition technique. The prepared thin films were then vacuum annealed at two different temperatures (300 °C and 400 °C) to assess the impact of annealing on their properties. The presence of the cubic NiO phase was verified using X-ray diffraction (XRD) analysis, with enhanced grain growth and improved crystallinity observed at higher annealing temperature (400 °C). UV–Vis spectroscopy was revealed a notable increase in emission intensity with annealing, particularly at 400 °C, suggesting reduced non-radiative recombination and improved electron–hole pair recombination efficiency. The energy bandgap of the films decreased from 4.34 eV (as-deposited) to 4.15 eV (annealing at 400 °C). This reduction into bandgap is attributed to improved crystallinity and fewer structural defects, enhancing photon absorption in the visible spectrum. Atomic force microscopy (AFM) provided insights into surface morphology. A noticeable transformation in grain size and surface features was observed as the annealing temperature increased. The FE-SEM images indicate that films were uniformly deposited across the substrate, exhibiting excellent adhesion. The presence of specific peaks in the EDX spectra for Ni, Co and Zn corroborates the successful deposition of Co and Zn alongside NiO. Hall Effect measurements were revealed the conductivity of the thin film experiences a notable rise from 1.38 Ω⁻1 cm⁻1 to 96.94 Ω⁻1 cm⁻1 after annealing. The findings confirm that annealing significantly enhances the structural, optical and surface morphological properties of NiO/Co/Zn thin films.
期刊介绍:
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.