钆掺杂对β-Ga2O3结构、磁性和光学性质的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Anju Babu, N. Madhusudhana Rao
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引用次数: 0

摘要

为了研究钆(Gd)掺杂对β-氧化镓结构、磁性和光学特性的影响,采用回流冷凝法制备了Gd掺杂的β-Ga2O3粉末样品,Gd浓度分别为0、1、3、5和7 M%。通过x射线衍射(XRD)和Rietveld细化的结构分析证实,在Gd浓度为0、1和3 M%时,形成了单相单斜β-Ga2O3。然而,掺杂5和7 M% Gd的样品显示立方Gd3Ga5O12的相贡献较小,而β-Ga2O3是主要相。表面形貌分析表明,纯样品和掺杂样品均保持椭球形态。能量色散x射线光谱(EDX)证实了制备样品的纯度,鉴定出镓、氧和钆是唯一存在的元素。反射率研究和Tauc图分析表明,随着Gd掺杂量的增加,反射率和带隙都有所降低。紫外-可见区的光致发光研究显示紫外、蓝色和绿色区域的发射峰。在室温下进行的磁性研究表明,Gd掺杂后β-Ga2O3从抗磁性状态转变为反铁磁性状态。改性的磁性能,结合通过Gd掺杂获得的增强的光学性能,探索了Gd掺杂β-Ga₂O₃作为多功能材料的功效,为其作为双功能半导体材料的应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Insights into the effect of gadolinium doping on the structural, magnetic, and optical properties of β-Ga2O3

To examine the effect of gadolinium (Gd) doping on the structural, magnetic, and optical characteristics of β-gallium oxide, Gd-doped β-Ga2O3 powder samples were prepared with Gd concentrations of 0, 1, 3, 5, and 7 M% using a reflux condensation method. Structural analysis via X-ray diffraction (XRD) and Rietveld refinement confirmed the formation of single-phase monoclinic β-Ga2O3 at Gd concentrations of 0, 1, and 3 M%. However, samples doped with 5 and 7 M% Gd exhibited minor phase contributions from cubic Gd3Ga5O12 alongside β-Ga2O3 as the major phase. Analysis of the surface morphology revealed that both pure and Gd-doped samples retained an ellipsoidal morphology. Energy-dispersive X-ray spectroscopy (EDX) confirmed the purity of the prepared samples, identifying gallium, oxygen, and gadolinium as the sole elements present. Reflectance studies and Tauc plot analysis indicated a reduction in both reflectance and bandgap with increasing Gd doping. Photoluminescence studies in the UV–Vis region showed emission peaks in the UV, blue, and green regions. Magnetic studies conducted at room temperature demonstrated a transition in β-Ga2O3 from a diamagnetic to an antiferromagnetic state upon Gd doping. The modified magnetic properties, combined with the enhanced optical properties achieved through Gd doping, explore the efficacy of Gd-doped β-Ga₂O₃ as a multifunctional material, paving the way for its use in applications as a bifunctional semiconductor material.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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