掺铌钛酸锶钡的水热合成、相控制及介电分析

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Divya Siya Mu, Tumuluri Bhavana Sri Venkata Naga Lakshmi, Duraisamy Kumaresan, R. Krishna Prasad, M. Sivakumar
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引用次数: 0

摘要

本文研究了直接水热法合成钛酸锶钡(Ba0.6Sr0.4TiO3, BST)和掺铌(Nb+5)的BST (Ba0.6Sr0.4Ti1−xNbxO3, BSTNb)纳米粉体、相控制和介电分析。以金属卤化物前驱体和氧化钛纳米粉为原料,在不同的水热温度和反应时间下,在碱性条件下制备了纯BST。x射线衍射分析表明,不同重量百分比的铌掺杂在三相BST中会引起四方畸变,实现可控的相变,并提高结晶度。拉曼分析表明,铌掺杂浓度引起了合金的四方相变。紫外-可见吸收光谱分析表明,随着Nb+5掺杂浓度的增加,带隙从2.9 eV缩小到2.0 eV。引入Nb+5离子后,BST的晶格扩展,纳米颗粒的平均尺寸减小,表面形貌改善,显著影响了BST的总表面积和介电光学性能。电介质分析表明,随着掺杂浓度的增加,由于缺陷偶极子的形成达到一定程度,BST的介电常数减小,介电损耗增大,掺铌BST的介电性能优于纯BST。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hydrothermal synthesis, phase control, and dielectric analysis of niobium-doped barium strontium titanate

In this work, the direct hydrothermal synthesis of barium strontium titanate (Ba0.6Sr0.4TiO3, BST) and the niobium (Nb+5)-doped BST (Ba0.6Sr0.4Ti1−xNbxO3, BSTNb) nanopowders, their phase control, and dielectric analysis are investigated. Pure BST has been prepared from its stoichiometric amounts of metal halide precursors and titanium oxide nanopowders in alkaline conditions at different hydrothermal temperatures and reaction times. X-ray diffraction analysis has demonstrated that different weight percentages of Nb doping in cubic-phase BST induce tetragonal distortions, enable controlled phase transformations, and improve crystallinity. Also, Raman analysis has indicated the tetragonal phase transformation induced by the Nb dopant concentrations. UV–visible absorption spectral analysis suggests a band gap narrowing from 2.9 eV to 2.0 eV, while increasing Nb+5 dopant concentration. By introducing Nb+5 ions, the lattice expands, the average size of nanoparticles decreases, and surface morphology improves, which significantly affects the total surface area and dielectric and optical properties of BST. The dielectric analysis has indicated that the dielectric constant of BST decreases, and dielectric loss increases with increasing dopant concentration due to the defect dipole formation up to a certain level, and the dielectric performance of Nb-doped BST has been found superior to that of pure BST.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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