基于光电传输门的180nm CMOS跨阻放大器

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2025-04-02 DOI:10.1109/JSEN.2025.3555304

Sunkyung Lee;Bobin Seo;Somi Park;Sung Min Park

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引用次数: 0

摘要

本文提出了一种基于光电传输门的跨阻放大器（OTG-TIA），该放大器采用0.18- $\mu $ m互补金属氧化物半导体（CMOS）技术实现，用于短距离光探测和测距（LiDAR）传感器应用。特别是，在片上P+/ n阱/深n阱雪崩光电二极管（APD）和分流反馈电压模式逆变器TIA之间策略性地放置了传输门（TG）。这种配置不仅可以将可观的光电二极管电容从影响接收器带宽（BW）中解耦，还可以减少片上APD的直流失调电流。此外，OTG-TIA采用多级逆变链结构，采用双反馈电阻，提高了电压增益，实现了输出阻抗匹配。此外，基于tg的自动增益控制（AGC）与反馈电阻一起使用，从而进一步扩展了输入动态范围。OTG-TIA原型器件的测量性能为67.6 db $\Omega $跨阻增益，2.14 ghz BW， 57.5 db输入动态范围，在1.8 v电源下功耗为22.3 mw。核心电路占地面积为$206\times 55.5~\mu $ m2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An Optoelectronic Transmission-Gate-Based Transimpedance Amplifier in 180 nm CMOS

This article presents an optoelectronic transmission-gate-based transimpedance amplifier (OTG-TIA) implemented by using a 0.18-

$\mu $

m complementary metal-oxide-semiconductor (CMOS) technology for short-range light detection and ranging (LiDAR) sensor applications. Particularly, a transmission gate (TG) is strate- gically positioned between the on-chip P+/N-Well/Deep N-Well avalanche photodiode (APD) and the shunt-feedback voltage-mode inverter TIA. This configuration not only decouples the considerable photodiode capacitance from influencing the receiver bandwidth (BW) but also reduces the dc offset currents from the on-chip APD. Moreover, the OTG-TIA features a multistage inverter-chain architecture with dual-feedback resistors to improve the voltage gain and achieve the output impedance matching. Additionally, a TG-based automatic gain control (AGC) is employed alongside the feedback resistor, thereby extending the input dynamic range further. Prototype devices of the proposed OTG-TIA show a measured performance of 67.6-dB

$\Omega $

transimpedance gain, 2.14-GHz BW, 57.5-dB input dynamic range, and 22.3-mW power consumption from a 1.8-V supply. The core circuit covers an area of

$206\times 55.5~\mu $

m2.

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来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

期刊介绍： The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice