不同掺杂浓度和退火气氛下同外延掺镁氮化镓的发光特性

IF 3.3 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence Pub Date : 2025-05-13 DOI:10.1016/j.jlumin.2025.121294

Wenxuan Wu , Zhengdong Shu , Xiaodan Wang , Yue Wang , Yangye Pan , Jiahao Sun , Xiaodong Gao , Shunan Zheng , Miao Wang , Xionghui Zeng , Ke Xu

{"title":"不同掺杂浓度和退火气氛下同外延掺镁氮化镓的发光特性","authors":"Wenxuan Wu , Zhengdong Shu , Xiaodan Wang , Yue Wang , Yangye Pan , Jiahao Sun , Xiaodong Gao , Shunan Zheng , Miao Wang , Xionghui Zeng , Ke Xu","doi":"10.1016/j.jlumin.2025.121294","DOIUrl":null,"url":null,"abstract":"<div><div>The luminescence properties of p-type GaN thin films grown on high-quality GaN FS substrates, with Mg doping concentrations ranging from 5 × 10<sup>18</sup> cm<sup>−3</sup> to 8 × 10<sup>19</sup> cm<sup>−3</sup>, were investigated using low-temperature and room-temperature PL and CL spectra. The UVL peak at 3.27 eV and the two BL peaks at 3.05 eV and 2.7 eV observed in the sample have been identified. These peaks are attributed to different defect states introduced by Mg doping in GaN. Their correlation with the UVL peak and the two BL peaks has been established, providing insight into the acceptor energy levels induced by Mg doping. At different doping concentrations, annealing has a varying impact on the luminescence peaks. It was observed that the BL2 peak at 2.7 eV competes with the UVL peak. Annealing in N<sub>2</sub> produces higher-intensity UVL peaks than annealing in O<sub>2</sub>, indicating that N<sub>2</sub> annealing is more beneficial for activating Mg<sub>Ga</sub> acceptors compared to O<sub>2</sub> annealing in c-plane homoepitaxial GaN.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"284 ","pages":"Article 121294"},"PeriodicalIF":3.3000,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres\",\"authors\":\"Wenxuan Wu , Zhengdong Shu , Xiaodan Wang , Yue Wang , Yangye Pan , Jiahao Sun , Xiaodong Gao , Shunan Zheng , Miao Wang , Xionghui Zeng , Ke Xu\",\"doi\":\"10.1016/j.jlumin.2025.121294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The luminescence properties of p-type GaN thin films grown on high-quality GaN FS substrates, with Mg doping concentrations ranging from 5 × 10<sup>18</sup> cm<sup>−3</sup> to 8 × 10<sup>19</sup> cm<sup>−3</sup>, were investigated using low-temperature and room-temperature PL and CL spectra. The UVL peak at 3.27 eV and the two BL peaks at 3.05 eV and 2.7 eV observed in the sample have been identified. These peaks are attributed to different defect states introduced by Mg doping in GaN. Their correlation with the UVL peak and the two BL peaks has been established, providing insight into the acceptor energy levels induced by Mg doping. At different doping concentrations, annealing has a varying impact on the luminescence peaks. It was observed that the BL2 peak at 2.7 eV competes with the UVL peak. Annealing in N<sub>2</sub> produces higher-intensity UVL peaks than annealing in O<sub>2</sub>, indicating that N<sub>2</sub> annealing is more beneficial for activating Mg<sub>Ga</sub> acceptors compared to O<sub>2</sub> annealing in c-plane homoepitaxial GaN.</div></div>\",\"PeriodicalId\":16159,\"journal\":{\"name\":\"Journal of Luminescence\",\"volume\":\"284 \",\"pages\":\"Article 121294\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Luminescence\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022231325002340\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231325002340","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

摘要

采用低温和室温PL和CL光谱研究了Mg掺杂浓度为5 × 1018 cm−3 ~ 8 × 1019 cm−3的高质量GaN FS衬底上生长的p型GaN薄膜的发光特性。在样品中发现了3.27 eV的UVL峰和3.05 eV和2.7 eV的两个BL峰。这些峰是由于Mg在GaN中掺杂引入了不同的缺陷态。建立了它们与UVL峰和两个BL峰的相关性，从而深入了解了Mg掺杂诱导的受体能级。在不同掺杂浓度下，退火对发光峰的影响是不同的。结果表明，2.7 eV时BL2峰与UVL峰存在竞争关系。在N2中退火比在O2中退火产生更高强度的UVL峰，这表明在c平面同外延GaN中，与O2退火相比，N2退火更有利于活化MgGa受体。

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Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres

The luminescence properties of p-type GaN thin films grown on high-quality GaN FS substrates, with Mg doping concentrations ranging from 5 × 10¹⁸ cm⁻³ to 8 × 10¹⁹ cm⁻³, were investigated using low-temperature and room-temperature PL and CL spectra. The UVL peak at 3.27 eV and the two BL peaks at 3.05 eV and 2.7 eV observed in the sample have been identified. These peaks are attributed to different defect states introduced by Mg doping in GaN. Their correlation with the UVL peak and the two BL peaks has been established, providing insight into the acceptor energy levels induced by Mg doping. At different doping concentrations, annealing has a varying impact on the luminescence peaks. It was observed that the BL2 peak at 2.7 eV competes with the UVL peak. Annealing in N₂ produces higher-intensity UVL peaks than annealing in O₂, indicating that N₂ annealing is more beneficial for activating Mg_Ga acceptors compared to O₂ annealing in c-plane homoepitaxial GaN.

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来源期刊

Journal of Luminescence 物理-光学

CiteScore

6.70

自引率

13.90%

发文量

850

审稿时长

3.8 months

期刊介绍： The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid. We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.