Van Quang Nguyen , Thi Huong Nguyen , Minh-Anh Tran , Chinh Tam Le , Cao Khang Nguyen , Tam Tran Van , Yong Soo Kim , June Hyuk Lee , Van Thiet Duong , The Long Phan , Anh Duc Nguyen , Do Duc Cuong , Sunglae Cho
{"title":"在te处理的GaAs (111)B衬底上生长高质量CdTe薄膜","authors":"Van Quang Nguyen , Thi Huong Nguyen , Minh-Anh Tran , Chinh Tam Le , Cao Khang Nguyen , Tam Tran Van , Yong Soo Kim , June Hyuk Lee , Van Thiet Duong , The Long Phan , Anh Duc Nguyen , Do Duc Cuong , Sunglae Cho","doi":"10.1016/j.mtla.2025.102418","DOIUrl":null,"url":null,"abstract":"<div><div>We report the high-quality growth of CdTe(111) films on GaAs(111)B substrates despite a significant lattice mismatch of 14.6 %, achieved using molecular beam epitaxy (MBE). The quality of the CdTe films was found to be highly dependent on the pre-treatment of the GaAs substrates. Notably, the best crystallinity was achieved on Te-treated GaAs(111)B substrates at elevated temperatures. CdTe films were successfully epitaxially grown along the [111] direction on Te-treated GaAs(111)B substrates over a wide temperature range of 50 to 320 °C, with improved crystallinity observed at higher temperatures. The optimal growth temperature for high-quality CdTe films was determined to be between 270 and 320 °C. Additionally, film crystallinity was found to improve with increasing thickness due to strain relaxation. <u>When the CdTe film thickness approached approximately 500</u> <u>nm, photoluminescence measurements showed a significant reduction in defect-related emissions, suggesting improved optical quality.</u></div></div>","PeriodicalId":47623,"journal":{"name":"Materialia","volume":"41 ","pages":"Article 102418"},"PeriodicalIF":3.0000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-quality CdTe thin film growth on Te-treated GaAs (111)B substrate\",\"authors\":\"Van Quang Nguyen , Thi Huong Nguyen , Minh-Anh Tran , Chinh Tam Le , Cao Khang Nguyen , Tam Tran Van , Yong Soo Kim , June Hyuk Lee , Van Thiet Duong , The Long Phan , Anh Duc Nguyen , Do Duc Cuong , Sunglae Cho\",\"doi\":\"10.1016/j.mtla.2025.102418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We report the high-quality growth of CdTe(111) films on GaAs(111)B substrates despite a significant lattice mismatch of 14.6 %, achieved using molecular beam epitaxy (MBE). The quality of the CdTe films was found to be highly dependent on the pre-treatment of the GaAs substrates. Notably, the best crystallinity was achieved on Te-treated GaAs(111)B substrates at elevated temperatures. CdTe films were successfully epitaxially grown along the [111] direction on Te-treated GaAs(111)B substrates over a wide temperature range of 50 to 320 °C, with improved crystallinity observed at higher temperatures. The optimal growth temperature for high-quality CdTe films was determined to be between 270 and 320 °C. Additionally, film crystallinity was found to improve with increasing thickness due to strain relaxation. <u>When the CdTe film thickness approached approximately 500</u> <u>nm, photoluminescence measurements showed a significant reduction in defect-related emissions, suggesting improved optical quality.</u></div></div>\",\"PeriodicalId\":47623,\"journal\":{\"name\":\"Materialia\",\"volume\":\"41 \",\"pages\":\"Article 102418\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materialia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589152925000857\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materialia","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589152925000857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
High-quality CdTe thin film growth on Te-treated GaAs (111)B substrate
We report the high-quality growth of CdTe(111) films on GaAs(111)B substrates despite a significant lattice mismatch of 14.6 %, achieved using molecular beam epitaxy (MBE). The quality of the CdTe films was found to be highly dependent on the pre-treatment of the GaAs substrates. Notably, the best crystallinity was achieved on Te-treated GaAs(111)B substrates at elevated temperatures. CdTe films were successfully epitaxially grown along the [111] direction on Te-treated GaAs(111)B substrates over a wide temperature range of 50 to 320 °C, with improved crystallinity observed at higher temperatures. The optimal growth temperature for high-quality CdTe films was determined to be between 270 and 320 °C. Additionally, film crystallinity was found to improve with increasing thickness due to strain relaxation. When the CdTe film thickness approached approximately 500nm, photoluminescence measurements showed a significant reduction in defect-related emissions, suggesting improved optical quality.
期刊介绍:
Materialia is a multidisciplinary journal of materials science and engineering that publishes original peer-reviewed research articles. Articles in Materialia advance the understanding of the relationship between processing, structure, property, and function of materials.
Materialia publishes full-length research articles, review articles, and letters (short communications). In addition to receiving direct submissions, Materialia also accepts transfers from Acta Materialia, Inc. partner journals. Materialia offers authors the choice to publish on an open access model (with author fee), or on a subscription model (with no author fee).