Dapeng Jin, Zhikai Gan, Songmin Zhou, Xi Wang, Quanzhi Sun, Xun Li, Liqi Zhu, Chun Lin
{"title":"高质量HgCdTe探测器外源掺杂n的Au掺杂工艺研究","authors":"Dapeng Jin, Zhikai Gan, Songmin Zhou, Xi Wang, Quanzhi Sun, Xun Li, Liqi Zhu, Chun Lin","doi":"10.1063/5.0268537","DOIUrl":null,"url":null,"abstract":"Au, the most pivotal dopant in n-on-p HgCdTe technology, exhibits intricate interactions with Hg vacancy. Understanding this interaction is essential for the fabrication of Au-doped HgCdTe infrared detectors. In this study, we examined the diffusion properties of Au atoms in vacancy-doped HgCdTe utilizing secondary ion mass spectrometry and variable-temperature Hall measurements. The results indicate that Au atoms in interstitial sites rapidly diffuse into HgCdTe, continuing until they occupy vacancy sites and act as acceptors. Infrared detectors doped with Au via this approach exhibited an order of decrease in the dark current density compared to vacancy-doped counterparts, suggesting that Au atoms almost occupy Hg vacancies, achieving effective incorporation.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"43 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector\",\"authors\":\"Dapeng Jin, Zhikai Gan, Songmin Zhou, Xi Wang, Quanzhi Sun, Xun Li, Liqi Zhu, Chun Lin\",\"doi\":\"10.1063/5.0268537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Au, the most pivotal dopant in n-on-p HgCdTe technology, exhibits intricate interactions with Hg vacancy. Understanding this interaction is essential for the fabrication of Au-doped HgCdTe infrared detectors. In this study, we examined the diffusion properties of Au atoms in vacancy-doped HgCdTe utilizing secondary ion mass spectrometry and variable-temperature Hall measurements. The results indicate that Au atoms in interstitial sites rapidly diffuse into HgCdTe, continuing until they occupy vacancy sites and act as acceptors. Infrared detectors doped with Au via this approach exhibited an order of decrease in the dark current density compared to vacancy-doped counterparts, suggesting that Au atoms almost occupy Hg vacancies, achieving effective incorporation.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"43 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0268537\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0268537","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector
Au, the most pivotal dopant in n-on-p HgCdTe technology, exhibits intricate interactions with Hg vacancy. Understanding this interaction is essential for the fabrication of Au-doped HgCdTe infrared detectors. In this study, we examined the diffusion properties of Au atoms in vacancy-doped HgCdTe utilizing secondary ion mass spectrometry and variable-temperature Hall measurements. The results indicate that Au atoms in interstitial sites rapidly diffuse into HgCdTe, continuing until they occupy vacancy sites and act as acceptors. Infrared detectors doped with Au via this approach exhibited an order of decrease in the dark current density compared to vacancy-doped counterparts, suggesting that Au atoms almost occupy Hg vacancies, achieving effective incorporation.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.