Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang
{"title":"稀mnbi2te4合金化可实现高性能GeTe热电器件","authors":"Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang","doi":"10.1063/5.0267606","DOIUrl":null,"url":null,"abstract":"As an attractive lead-free thermoelectric material, GeTe has gained widespread interest. However, the extremely high hole concentration seriously limits the thermoelectric performance of pristine GeTe. In this work, dilute MnBi2Te4-alloying is utilized to synergically optimize electrical- and thermal-transport properties of GeTe for thermoelectric performance improvement. It can not only decrease the precipitation of Ge to optimize carrier concentration, but also promote multi-band convergence to enlarge the density of state effective mass. Furthermore, the MnBi2Te4-alloyed samples also maintain a moderate carrier mobility. In addition, the increased point-defect scattering for phonons leads to the significant reduction in lattice thermal conductivity. Consequently, a high peak thermoelectric figure of merit (ZT) of ∼1.8 at 723 K and a large average ZT of ∼1.0 from 300 to 723 K are achieved in 4% MnBi2Te4-alloyed GeTe, showing the potential of dilute compound alloying to enhance the thermoelectric performance of GeTe by the concurrent regulation of electrical- and thermal-transport properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"120 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics\",\"authors\":\"Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang\",\"doi\":\"10.1063/5.0267606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As an attractive lead-free thermoelectric material, GeTe has gained widespread interest. However, the extremely high hole concentration seriously limits the thermoelectric performance of pristine GeTe. In this work, dilute MnBi2Te4-alloying is utilized to synergically optimize electrical- and thermal-transport properties of GeTe for thermoelectric performance improvement. It can not only decrease the precipitation of Ge to optimize carrier concentration, but also promote multi-band convergence to enlarge the density of state effective mass. Furthermore, the MnBi2Te4-alloyed samples also maintain a moderate carrier mobility. In addition, the increased point-defect scattering for phonons leads to the significant reduction in lattice thermal conductivity. Consequently, a high peak thermoelectric figure of merit (ZT) of ∼1.8 at 723 K and a large average ZT of ∼1.0 from 300 to 723 K are achieved in 4% MnBi2Te4-alloyed GeTe, showing the potential of dilute compound alloying to enhance the thermoelectric performance of GeTe by the concurrent regulation of electrical- and thermal-transport properties.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"120 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0267606\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0267606","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
As an attractive lead-free thermoelectric material, GeTe has gained widespread interest. However, the extremely high hole concentration seriously limits the thermoelectric performance of pristine GeTe. In this work, dilute MnBi2Te4-alloying is utilized to synergically optimize electrical- and thermal-transport properties of GeTe for thermoelectric performance improvement. It can not only decrease the precipitation of Ge to optimize carrier concentration, but also promote multi-band convergence to enlarge the density of state effective mass. Furthermore, the MnBi2Te4-alloyed samples also maintain a moderate carrier mobility. In addition, the increased point-defect scattering for phonons leads to the significant reduction in lattice thermal conductivity. Consequently, a high peak thermoelectric figure of merit (ZT) of ∼1.8 at 723 K and a large average ZT of ∼1.0 from 300 to 723 K are achieved in 4% MnBi2Te4-alloyed GeTe, showing the potential of dilute compound alloying to enhance the thermoelectric performance of GeTe by the concurrent regulation of electrical- and thermal-transport properties.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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