杂原子Sn对层状WS2中滑移能垒影响的电子机制。

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dulin Huang, Gonglei Shao, Xu Zhang, Zhen Zhou
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引用次数: 0

摘要

摩擦损失通常会导致巨大的经济成本,而润滑油的应用可以显著减轻这些损失。近年来,层状材料由于其优异的润滑性能而引起了广泛的研究兴趣。然而,与层状材料中嵌入杂原子相关的滑动机制的探索仍然是一个相当不确定的主题。在这项工作中,我们利用密度泛函理论揭示了Sn原子嵌入层状WS2中的摩擦调制机制。我们的研究结果表明,Sn嵌入显著降低了滑动能垒(降至0.96 meV原子-1),而摩擦力和剪切强度分别降至0.0011 nN原子-1和0.0008 GPa,优于传统的二维材料,如mos2和石墨烯。此外,锡的嵌入增强了层间静电斥力,抑制了动态电荷密度波动。为了定量地阐明能量势垒的变化,我们提出了一种新的度量-总电荷密度差演化(Δρ2)。这一发现为设计超低摩擦润滑剂提供了理论指导,并有望提高工业机械的能源效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic mechanism behind the influence of intercalated heteroatom Sn on the slip energy barrier in layered WS2.

Frictional losses often result in substantial economic costs, and the application of lubricants can markedly mitigate these losses. Recently, layered materials have garnered extensive research interest due to their exceptional lubricating properties. However, the exploration of sliding mechanisms associated with intercalated heteroatoms in layered materials remains a subject of considerable uncertainty. In this work, we employ density functional theory to unravel the friction modulation mechanism of Sn atoms intercalated in layered WS2. Our findings demonstrate that Sn intercalation significantly reduces the sliding energy barrier (down to 0.96 meV atom-1), while the friction force and shear strength are minimized to 0.0011 nN atom-1and 0.0008 GPa, respectively, outperforming conventional two-dimensional materials such as MoS2and graphene. Furthermore, Sn intercalation enhances interlayer electrostatic repulsion and suppresses dynamic charge density fluctuations. To quantitatively elucidate the energy barrier variation, we propose a novel metric-total charge density difference evolution (Δρ2). This discovery provides theoretical guidance for designing ultra-low-friction lubricants and is expected to advance energy efficiency in industrial machinery.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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