高性能原子层沉积双栅InGaO薄膜晶体管。

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-05-15 DOI:10.1021/acs.nanolett.5c01059

Chenchen Ye,Jiakang Li,Peiyan Hong,Jiaming Zhao,Xiangshui Miao,Xuefei Li

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引用次数: 0

摘要

非晶氧化物半导体（aos）以其高载流子密度、低热收支和大带隙等优点受到了广泛的关注。然而，aos中的高电子密度阻碍了它们有效关闭的能力，导致阈值电压（Vth）和迁移率（μ）之间的权衡。在这项工作中，我们报道了高性能双栅（DG）氧化铟镓（IGO） tft，利用局部O3处理有效地钝化了IGO tft通道区域的氧空位（Vo），从而实现了正Vth和高迁移率。100 nm短通道长度（Lch）增强模式IGO DG TFT的理想亚阈值斜率（SS）为63 mV/dec，最大漏极电流IDS为1.36 mA/μm，创纪录的高跨导（gm）为1008 μS/μm。该研究展示了一种克服Vth和μ之间权衡的新方法，表明IGO dg - tft是实现高性能单片三维（M3D）集成电路的有前途的晶体管。

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High-Performance Atomic-Layer-Deposited Dual-Gate InGaO Thin-Film Transistors.

Amorphous oxide semiconductors (AOSs) have attracted considerable attention because of their high carrier density, low thermal budget, and large bandgap. However, the high electron density in AOSs hinders their ability to turn off effectively, resulting in a trade-off between the threshold voltage (Vth) and mobility (μ). In this work, we report high-performance dual-gate (DG) indium gallium oxide (IGO) TFTs utilizing localized O3 treatment to effectively passivate the oxygen vacancies (Vo) in the channel region of IGO TFTs, thereby achieving a positive Vth and high mobility. The 100 nm short-channel length (Lch) enhancement-mode IGO DG TFT exhibits an ideal subthreshold slope (SS) of 63 mV/dec, a maximum drain current IDS of 1.36 mA/μm, and a record high transconductance (gm) of 1008 μS/μm. This study demonstrates a novel method to overcome the trade-off between Vth and μ, showing that IGO DG-TFTs are promising transistors for enabling high-performance monolithic three-dimensional (M3D) integrated circuits.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.