{"title":"La掺杂对Bi-2212结构和超导性能的影响","authors":"Jiaxin Chang, Fang Yang, Shengnan Zhang, Hao Cao, Yifan Zhang, Guoqing Liu, Jixing Liu, Chengshan Li, Jianfeng Li, Pingxiang Zhang","doi":"10.1007/s10854-025-14917-6","DOIUrl":null,"url":null,"abstract":"<div><p>A series of Bi<sub>2-x</sub>La<sub>x</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+<i>δ</i></sub> (x = 0.00, 0.05, 0.10, 0.15, and 0.20) ceramic samples were synthesized by co-precipitation (CP) method. In this work, the influence of La doping on the phase evolution, microstructure, critical transition temperature, and flux pinning properties of Bi-2212 was investigated. The results indicate that La doping significantly promotes the formation of the Bi-2212 phase. As the La content increases, the a and b axis lengths of Bi-2212 structure gradually increase, while the c-axis length decreases. The La doping will introduce compressive stress into the Bi-O layers. Meanwhile, the modulation structure in Bi-2212 becomes enhanced with La substitution by decreasing the modulation period, which is effectively explained by the extra oxygen model. Furthermore, the critical transition temperatures (<span>\\(T_c^{onset}\\)</span>) initially increases and then decreases with higher La doping levels, reaching a maximum <span>\\(T_c^{onset}\\)</span> of 85.9 K for the sample with x = 0.15. The sample also exhibits the strongest flux pinning capability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of La doping on the structure and superconducting properties of Bi-2212\",\"authors\":\"Jiaxin Chang, Fang Yang, Shengnan Zhang, Hao Cao, Yifan Zhang, Guoqing Liu, Jixing Liu, Chengshan Li, Jianfeng Li, Pingxiang Zhang\",\"doi\":\"10.1007/s10854-025-14917-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A series of Bi<sub>2-x</sub>La<sub>x</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+<i>δ</i></sub> (x = 0.00, 0.05, 0.10, 0.15, and 0.20) ceramic samples were synthesized by co-precipitation (CP) method. In this work, the influence of La doping on the phase evolution, microstructure, critical transition temperature, and flux pinning properties of Bi-2212 was investigated. The results indicate that La doping significantly promotes the formation of the Bi-2212 phase. As the La content increases, the a and b axis lengths of Bi-2212 structure gradually increase, while the c-axis length decreases. The La doping will introduce compressive stress into the Bi-O layers. Meanwhile, the modulation structure in Bi-2212 becomes enhanced with La substitution by decreasing the modulation period, which is effectively explained by the extra oxygen model. Furthermore, the critical transition temperatures (<span>\\\\(T_c^{onset}\\\\)</span>) initially increases and then decreases with higher La doping levels, reaching a maximum <span>\\\\(T_c^{onset}\\\\)</span> of 85.9 K for the sample with x = 0.15. The sample also exhibits the strongest flux pinning capability.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 14\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14917-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14917-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of La doping on the structure and superconducting properties of Bi-2212
A series of Bi2-xLaxSr2CaCu2O8+δ (x = 0.00, 0.05, 0.10, 0.15, and 0.20) ceramic samples were synthesized by co-precipitation (CP) method. In this work, the influence of La doping on the phase evolution, microstructure, critical transition temperature, and flux pinning properties of Bi-2212 was investigated. The results indicate that La doping significantly promotes the formation of the Bi-2212 phase. As the La content increases, the a and b axis lengths of Bi-2212 structure gradually increase, while the c-axis length decreases. The La doping will introduce compressive stress into the Bi-O layers. Meanwhile, the modulation structure in Bi-2212 becomes enhanced with La substitution by decreasing the modulation period, which is effectively explained by the extra oxygen model. Furthermore, the critical transition temperatures (\(T_c^{onset}\)) initially increases and then decreases with higher La doping levels, reaching a maximum \(T_c^{onset}\) of 85.9 K for the sample with x = 0.15. The sample also exhibits the strongest flux pinning capability.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.