不同硅基多层衬底上ZnO薄膜的表面声波特性

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
F. Laidoudi, C. Caliendo, F. Kanouni, S. Amara
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引用次数: 0

摘要

本文研究了不同硅源材料双层衬底上ZnO压电薄膜的表面声波特性。采用有限元分析方法研究了在多层ZnO/Si、ZnO/SiC/Si、ZnO/SiO2/Si和ZnO/SiN/Si结构中传播的前两种基本SAW模式的相速度和机电耦合因子K2。在这些衬底上生长ZnO薄膜,随后使用原子力显微镜(AFM)和x射线衍射仪(XRD)对薄膜质量进行了表征。在所研究的构型中,ZnO/SiO2/Si表现出最好的性能,表现出清晰的SAW模式,优异的结晶度和增强的K2。采用传统光刻技术制备ZnO/SiO2/Si SAW延迟线,并用网络分析仪对延迟线进行电学表征。该装置的响应证实了瑞利模式和塞泽模式的存在,与数值预测一致。本研究的发现有助于开发与硅和硅基技术兼容的高性能SAW传感器和谐振器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface acoustic wave characteristics in ZnO thin films deposited on different Silicon-based multilayered substrates

This paper investigates the characteristics of surface acoustic waves (SAWs) in piezoelectric ZnO thin films deposited on various bilayer substrates composed of silicon-derived materials. Finite element analysis is used to study the phase velocities and electromechanical coupling factors K2 of the first two fundamental SAW modes, propagating in multilayered ZnO/Si, ZnO/SiC/Si, ZnO/SiO2/Si, and ZnO/SiN/Si structures. ZnO thin films are grown on these substrates and subsequently characterized using atomic force microscopy (AFM) and X-ray diffraction (XRD) to assess film quality. Among the studied configurations, ZnO/SiO2/Si demonstrates the best performance, exhibiting well-defined SAW modes, superior crystallinity and enhanced K2. ZnO/SiO2/Si SAW delay line is then fabricated using conventional photolithography and electrically characterized by network analyzer. The response of the device confirms the presence of both Rayleigh and Sezawa modes, aligning with numerical predictions. The findings of this study contribute to the development of high-performance SAW sensors and resonators compatible with silicon and silicon-based technologies.

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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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