一种28 /39 ghz CMOS低电平发生器,具有隐式二次和三次谐波提取技术,用于多频段5G毫米波应用

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Kaitian Yang;Xiaolong Liu
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引用次数: 0

摘要

本文提出了一种采用隐式二次谐波和三次谐波提取技术的低相位噪声毫米波本振(LO)发生器。提出的谐波提取方法在保持较宽调谐范围的同时,有效地改善了毫米波频率范围内的相位噪声性能。该LO发生器采用65纳米CMOS工艺制造,可实现22至29.1 GHz和33至43.6 GHz的宽频率调谐范围。它的二次和三次谐波输出分别消耗7.4和8.8 mW。在载波频率为25.1 GHz的10mhz偏移处,二次谐波输出的相位噪声为- 131.1 dBc/Hz,对应的峰值性能图(FoM)为190.4 dBc/Hz。对于33.6 GHz的三次谐波输出,在10mhz偏移时相位噪声为−128.4 dBc/Hz,峰值FoM为189.5 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28-/39-GHz CMOS LO Generator With Implicit Second and Third Harmonic Extraction Techniques for Multiband 5G mm-Wave Applications
This work presents a low-phase-noise millimeter-wave (mm-wave) local oscillator (LO) generator employing implicit second and third harmonic extraction techniques. The proposed harmonic extraction approach effectively improves phase noise performance in the mm-wave frequency range while maintaining the wide tuning range. Fabricated in a 65-nm CMOS process, the proposed LO generator achieves a wide frequency tuning range from 22 to 29.1 and 33 to 43.6 GHz. It consumes 7.4 and 8.8 mW for the second and third harmonic outputs, respectively. The second harmonic output achieves a phase noise of −131.1 dBc/Hz at a 10-MHz offset from a carrier frequency of 25.1 GHz, corresponding to a peak figure of merit (FoM) of 190.4 dBc/Hz. For the third harmonic output at 33.6 GHz, the phase noise is −128.4 dBc/Hz at a 10-MHz offset, resulting in a peak FoM of 189.5 dBc/Hz.
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