Kuan Zhang , Yao Li , Quan Yuan , Guanghua Sun , Yanjie Wang
{"title":"w波段宽带高增益圆极化叠加寄生贴片π形天线阵列","authors":"Kuan Zhang , Yao Li , Quan Yuan , Guanghua Sun , Yanjie Wang","doi":"10.1016/j.mejo.2025.106729","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a W-band circularly polarized (CP) antenna featuring aperture-coupled rotating π-shaped patches and stacked parasitic patches. The design employs a pair of symmetrical π-shaped patches, whose optimized rotation angle enables the realization of high-quality circular polarization. Compared to conventional dipole or rectangular patch structures, the π-shaped configuration provides an enhanced axial ratio (AR) bandwidth. The radiating patches are embedded within a cavity formed by substrate-integrated waveguides (SIW), with energy coupling achieved through a precisely designed slot on the SIW ground plane. To further enhance the radiation performance, a pair of stacked rectangular parasitic patches are introduced above the radiating structure. Simulation results demonstrate that the proposed antenna element achieves an 11.7 % (86–97 GHz) AR bandwidth and a peak gain of 9.7 dBic. As proof of concept, a 2 × 2 elements prototype was designed and fabricated using single-layer PCB technology. Measurements demonstrate that this array exhibits an impedance bandwidth of 11.4 % (88–98.5 GHz), an AR bandwidth of 11.3 % from 87.2 to 97.6 GHz, a gain variation between 13.8 and 15.2 dBic, and the maximum aperture efficiency reaches 74.5 %.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106729"},"PeriodicalIF":1.9000,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"W-band wideband high-gain circularly polarized π-shaped antenna array with stacked parasitic patches\",\"authors\":\"Kuan Zhang , Yao Li , Quan Yuan , Guanghua Sun , Yanjie Wang\",\"doi\":\"10.1016/j.mejo.2025.106729\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper presents a W-band circularly polarized (CP) antenna featuring aperture-coupled rotating π-shaped patches and stacked parasitic patches. The design employs a pair of symmetrical π-shaped patches, whose optimized rotation angle enables the realization of high-quality circular polarization. Compared to conventional dipole or rectangular patch structures, the π-shaped configuration provides an enhanced axial ratio (AR) bandwidth. The radiating patches are embedded within a cavity formed by substrate-integrated waveguides (SIW), with energy coupling achieved through a precisely designed slot on the SIW ground plane. To further enhance the radiation performance, a pair of stacked rectangular parasitic patches are introduced above the radiating structure. Simulation results demonstrate that the proposed antenna element achieves an 11.7 % (86–97 GHz) AR bandwidth and a peak gain of 9.7 dBic. As proof of concept, a 2 × 2 elements prototype was designed and fabricated using single-layer PCB technology. Measurements demonstrate that this array exhibits an impedance bandwidth of 11.4 % (88–98.5 GHz), an AR bandwidth of 11.3 % from 87.2 to 97.6 GHz, a gain variation between 13.8 and 15.2 dBic, and the maximum aperture efficiency reaches 74.5 %.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"161 \",\"pages\":\"Article 106729\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S187923912500178X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S187923912500178X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
This paper presents a W-band circularly polarized (CP) antenna featuring aperture-coupled rotating π-shaped patches and stacked parasitic patches. The design employs a pair of symmetrical π-shaped patches, whose optimized rotation angle enables the realization of high-quality circular polarization. Compared to conventional dipole or rectangular patch structures, the π-shaped configuration provides an enhanced axial ratio (AR) bandwidth. The radiating patches are embedded within a cavity formed by substrate-integrated waveguides (SIW), with energy coupling achieved through a precisely designed slot on the SIW ground plane. To further enhance the radiation performance, a pair of stacked rectangular parasitic patches are introduced above the radiating structure. Simulation results demonstrate that the proposed antenna element achieves an 11.7 % (86–97 GHz) AR bandwidth and a peak gain of 9.7 dBic. As proof of concept, a 2 × 2 elements prototype was designed and fabricated using single-layer PCB technology. Measurements demonstrate that this array exhibits an impedance bandwidth of 11.4 % (88–98.5 GHz), an AR bandwidth of 11.3 % from 87.2 to 97.6 GHz, a gain variation between 13.8 and 15.2 dBic, and the maximum aperture efficiency reaches 74.5 %.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.