Optimizing parameters to enhance photovoltaic performance of Ce1-AZnAO2/ CeMnO2/MAFASnBrI/BaSi2 solar cells

The efficiency of multilayer solar cells is often hindered by the improper selection of high energy bandgap materials, interfacial defects, and recombination losses, all of which limit charge carrier mobility and overall performance. This study aims to enhance the photovoltaic performance of a Ce_1-AZn_AO₂/CeMnO₂/MAFASnBrI/BaSi₂ solar cell by incorporating CeZnO₂ as a high energy bandgap electron transport layer material (ETLM) and BaSi₂ as a high energy bandgap hole transport layer material (HTLM), along with strategic optimization of defect parameters. Using numerical simulations, we investigated the impact of energy levels, layer thicknesses, defect densities, and recombination rates across key interfaces. The doping concentration of Zn in Ce_1-AZn_AO₂was adjusted to reduce trap-assisted recombination and enhance carrier mobility. Simultaneously, the CeMnO₂ layer was optimized for thickness and interface passivation to improve carrier selectivity. Modifications to the MAFASnBrI₃ photoactive layer promoted balanced charge transport and improved optical absorption, while the BaSi₂ substrate supported efficient carrier collection. Simulation results revealed a substantial improvement in power conversion efficiency (PCE), achieving values above 28.74 %, along with enhanced open-circuit voltage (Voc) and fill factor (FF). These outcomes highlight the effectiveness of defect engineering in advancing high-efficiency, next-generation photovoltaic technologies.