优化CdS薄膜作为太阳能电池的光学窗口:低温和经典技术的比较研究

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Melih Manir, Gamze Genç, Vagif Nevruzoglu, Murat Tomakin
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引用次数: 0

摘要

在本研究中,在100-573 K的衬底温度下,使用两种不同的技术(经典和低温热蒸发技术)在准封闭体积中制备了CdS薄膜,并研究了其特征性质(结构、电学和光学性质)。在经典技术(热)中,CdS薄膜的衬底温度分别为373 K、473 K和573 K,而在低温技术(冷)中,CdS薄膜的衬底温度范围为100-300 K,步骤为50 K。x射线衍射(XRD)分析表明,在所有衬底温度下,CdS薄膜在(002)平面上呈六边形结构生长。根据场发射扫描电镜(FESEM)图像,在200 K衬底温度下制备的薄膜由大小相等的球形晶粒组成。这种情况表明,在低温法制膜过程中,孤子生长机制发生在衬底温度为200k的条件下。由于在孤子生长机制(质量输运)中发生在衬底表面的孤子波的特性,使得薄膜以紧密堆积的形式生长。因此,所生产的薄膜由大小相等的簇组成,提供均匀的表面和均匀的厚度。原子力显微镜(AFM)和光学分析表明,在200 K衬底温度下制备的CdS薄膜具有最小的平均表面粗糙度值Ra和最高的透过率值。发现CdS薄膜的能带隙(2.37 ~ 2.47 eV)和电阻率(1.25 × 103 ~ 5.39 × 103 Ω-cm)随衬底温度的降低而增大。载流子密度随衬底温度的降低而增加(3.91 × 1017 ~ 1.73 × 1016 cm−3)。能谱分析表明,薄膜在473 K和200 K的衬底温度下呈化学计量生长。结果表明,在衬底温度为200k的情况下,利用新低温技术制备的CdS薄膜作为光学窗口层,可以显著提高太阳能电池的效率。此外,两种技术都确定了可用于光器件生产的CdS薄膜的理想衬底温度值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimizing CdS thin films as optical windows in solar cells: A comparative study of cryogenic and classical techniques

In this study, CdS thin films were produced in a quasi-closed volume using two different techniques (classical and cryogenic thermal evaporation techniques) between the 100–573 K substrate temperature, and their characteristic properties (structural, electrical, and optical properties) were investigated. While CdS thin films were produced at 373 K, 473 K, and 573 K substrate temperatures in the classical technique (hot), they were produced at 100–300 K substrate temperature range with 50 K steps in the cryogenic technique (cold). The X-Ray Diffraction (XRD) analysis showed that the CdS thin films grew in a hexagonal structure in the (002) plane at all substrate temperatures. According to the field emission scanning electron microscope (FESEM) images, the thin films produced at 200 K substrate temperature consisted of equally sized spherical grains. This situation shows that the soliton growth mechanism occurs at a substrate temperature of 200 K during the film production process with the cryogenic technique. Due to the characteristic properties of the soliton waves occurring on the substrate surface in the soliton growth mechanism (mass transport), the films grow in a tight-packed form. Therefore, the produced films consist of clusters of equal size, providing a homogeneous surface and a uniform thickness. In addition, Atomic Force Microscope (AFM) and optical analyses showed that the CdS thin film produced at 200 K substrate temperature had the smallest average surface roughness value (Ra) and the highest optical transmittance value. It was found that the energy band gap (2.37–2.47 eV) and resistivity (1.25 × 103–5.39 × 103 Ω-cm) values ​​of CdS thin films increased with decreasing substrate temperature. The carrier density increased with decreasing substrate temperature (3.91 × 1017–1.73 × 1016 cm−3). Energy Dispersive Spectroscopy (EDS) analysis showed that the films grew stoichiometrically at substrate temperatures of 473 K and 200 K. The results brought out that in case of using of the produced CdS thin films at a substrate temperature of 200 K by the new cryogenic technique as an optical window layer could provide significant increases in efficiency in solar cells. In addition, ideal substrate temperature values ​​for CdS thin films that can be used in photodevice production were determined for both techniques.

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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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