Khryslyn G. Araño, Beth L. Armstrong, Robert L. Sacci, Matthew S. Chambers, Chun-Sheng Jiang, Joseph Quinn, Harry M. Meyer, Anton W. Tomich, Amanda Musgrove, Steven Lam, Elena Toups, Chongmin Wang, Christopher S. Johnson and Gabriel M. Veith
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This study investigates the preparation and electrochemical performance of metal-decorated Si powders (Si<small><sup>M</sup></small>, where M represents Ni, Fe, Ti, Ag, Al, or Y) as anode materials, using a simple high-energy ball milling process. STEM reveals that the resulting Si<small><sup>M</sup></small> architectures either appear as islands on the Si surface or are integrated into the Si bulk, although X-ray diffraction (XRD) confirms that the Si lattice is essentially unchanged. The inherent high electronic conductivity of the metals contributed to lower electrode resistance revealed through scanning spreading resistance microscopy (SSRM), with Si<small><sup>Ni</sup></small> achieving the overall lowest resistance at log(<em>R</em>) = 8.7 log(<em>Ω</em>), compared to log(<em>R</em>) = 10.8 log(<em>Ω</em>) for baseline Si, which is also consistent with reduced impedance during cycling. Among the materials studied, Si<small><sup>Ni</sup></small>, Si<small><sup>Fe</sup></small>, and Si<small><sup>Ti</sup></small> demonstrated the most promising performance, reducing overpotential by up to 20 mV, delivering specific capacities above 1000 mAh g<small><sup>−1</sup></small> at a C/3 rate, and exhibiting improved rate capability. Zeta potential measurements suggest that particles with lower zeta potential correlate with better performance. Finally, SEI analysis of insoluble species using XPS revealed that metal decoration, particularly with Ni, results in a stable SEI characterized by lower inorganic LiF content and increased C–O products compared to the baseline Si at high states of charge, consistent with its enhanced performance.</p>","PeriodicalId":101138,"journal":{"name":"RSC Applied Interfaces","volume":" 3","pages":" 648-664"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/lf/d4lf00393d?page=search","citationCount":"0","resultStr":"{\"title\":\"Metal decoration of Si particles via high-energy milling for lithium-ion battery anodes†\",\"authors\":\"Khryslyn G. Araño, Beth L. Armstrong, Robert L. Sacci, Matthew S. Chambers, Chun-Sheng Jiang, Joseph Quinn, Harry M. Meyer, Anton W. Tomich, Amanda Musgrove, Steven Lam, Elena Toups, Chongmin Wang, Christopher S. 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引用次数: 0
摘要
锂离子电池用硅(Si)阳极的固体电解质界面(SEI)是十多年来研究的热点。影响SEI形成和组成的一个关键因素是溶剂化Li离子的脱溶,这涉及到一个相关的能垒。为了解决这个问题,我们的目标是通过用金属装饰硅表面来破坏界面过程,金属通常用于提高硅的导电性。本研究采用简单的高能球磨工艺,研究了金属修饰硅粉(SiM,其中M代表Ni, Fe, Ti, Ag, Al或Y)作为阳极材料的制备和电化学性能。STEM表明,所得的SiM结构要么在Si表面上呈现孤岛,要么集成到Si体中,尽管x射线衍射(XRD)证实Si晶格基本上没有改变。金属固有的高电子导电性有助于通过扫描扩展电阻显微镜(SSRM)显示较低的电极电阻,与基线Si的log(R) = 10.8 log(Ω)相比,SiNi在log(R) = 8.7 log(Ω)时达到整体最低电阻,这也与循环过程中降低的阻抗一致。在所研究的材料中,sii、SiFe和SiTi表现出最具前景的性能,可将过电位降低高达20 mV,在C/3速率下提供超过1000 mAh g - 1的比容量,并表现出改进的速率能力。Zeta电位测量表明,具有较低Zeta电位的粒子具有较好的性能。最后,利用XPS对不溶物进行SEI分析发现,金属装饰,特别是Ni,导致了稳定的SEI,其特征是在高电荷状态下,与基准Si相比,无机LiF含量较低,C-O产物增加,这与其增强的性能相一致。
Metal decoration of Si particles via high-energy milling for lithium-ion battery anodes†
The solid electrolyte interphase (SEI) of silicon (Si) anodes for lithium-ion batteries has been a major focus of research for over a decade. One key factor influencing the formation and composition of the SEI is the desolvation of solvated Li ions, which involves an associated energy barrier. To address this, we aim to disrupt interfacial processes by decorating the Si surface with metals, which are conventionally used to improve the conductivity of Si. This study investigates the preparation and electrochemical performance of metal-decorated Si powders (SiM, where M represents Ni, Fe, Ti, Ag, Al, or Y) as anode materials, using a simple high-energy ball milling process. STEM reveals that the resulting SiM architectures either appear as islands on the Si surface or are integrated into the Si bulk, although X-ray diffraction (XRD) confirms that the Si lattice is essentially unchanged. The inherent high electronic conductivity of the metals contributed to lower electrode resistance revealed through scanning spreading resistance microscopy (SSRM), with SiNi achieving the overall lowest resistance at log(R) = 8.7 log(Ω), compared to log(R) = 10.8 log(Ω) for baseline Si, which is also consistent with reduced impedance during cycling. Among the materials studied, SiNi, SiFe, and SiTi demonstrated the most promising performance, reducing overpotential by up to 20 mV, delivering specific capacities above 1000 mAh g−1 at a C/3 rate, and exhibiting improved rate capability. Zeta potential measurements suggest that particles with lower zeta potential correlate with better performance. Finally, SEI analysis of insoluble species using XPS revealed that metal decoration, particularly with Ni, results in a stable SEI characterized by lower inorganic LiF content and increased C–O products compared to the baseline Si at high states of charge, consistent with its enhanced performance.