{"title":"λ/4 UIR上三次谐波双零点加载方案设计下带可调的三阶双频BPF","authors":"Jing Cai;Wei Qin;Qing-Yuan Lu;Jian-Xin Chen","doi":"10.1109/LMWT.2025.3545809","DOIUrl":null,"url":null,"abstract":"This letter presents a reconfigurable third-order dual-band bandpass filter (BPF) that features independent frequency tuning of a lower passband with constant absolute bandwidth (CABW) and a fixed upper passband. A combline structure using a third-harmonic (<inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>) dual-null-point semi-lumped loading scheme on quarter-wavelength (<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>/4) uniform impedance resonator (UIR) is proposed. This configuration enables frequency tuning of the lower band at fundamental frequency (<inline-formula> <tex-math>${f} _{1}$ </tex-math></inline-formula>) and the fixing of the upper band at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula> by series-loading varactors at the current null point (CNP) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. Meanwhile, the coupling coefficient of the lower band can be controlled to meet the requirements of CABW by parallel-loading lumped inductors between each two resonators and located at their voltage null points (VNPs) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. The mutual independence of parallel- and series-loading at the VNP and CNP is advantageous, as both lumped loadings do not affect the upper band entirely, including frequency and ABW. Based on these, the fabricated BPF exhibits a frequency-tuning range (TR) of 52.1% with a CABW of <inline-formula> <tex-math>$150~\\pm ~6$ </tex-math></inline-formula> MHz in the lower band, while the upper band maintains a fixed frequency and an ABW of 150 MHz, which shows good agreements between simulated and measured results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"517-520"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Third-Order Dual-Band BPF With a Tunable Lower Band Using Third-Harmonic Dual-Null-Points Loading Scheme on λ/4 UIR\",\"authors\":\"Jing Cai;Wei Qin;Qing-Yuan Lu;Jian-Xin Chen\",\"doi\":\"10.1109/LMWT.2025.3545809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a reconfigurable third-order dual-band bandpass filter (BPF) that features independent frequency tuning of a lower passband with constant absolute bandwidth (CABW) and a fixed upper passband. A combline structure using a third-harmonic (<inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>) dual-null-point semi-lumped loading scheme on quarter-wavelength (<inline-formula> <tex-math>$\\\\lambda $ </tex-math></inline-formula>/4) uniform impedance resonator (UIR) is proposed. This configuration enables frequency tuning of the lower band at fundamental frequency (<inline-formula> <tex-math>${f} _{1}$ </tex-math></inline-formula>) and the fixing of the upper band at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula> by series-loading varactors at the current null point (CNP) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. Meanwhile, the coupling coefficient of the lower band can be controlled to meet the requirements of CABW by parallel-loading lumped inductors between each two resonators and located at their voltage null points (VNPs) at <inline-formula> <tex-math>${f} _{3}$ </tex-math></inline-formula>. The mutual independence of parallel- and series-loading at the VNP and CNP is advantageous, as both lumped loadings do not affect the upper band entirely, including frequency and ABW. Based on these, the fabricated BPF exhibits a frequency-tuning range (TR) of 52.1% with a CABW of <inline-formula> <tex-math>$150~\\\\pm ~6$ </tex-math></inline-formula> MHz in the lower band, while the upper band maintains a fixed frequency and an ABW of 150 MHz, which shows good agreements between simulated and measured results.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 5\",\"pages\":\"517-520\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10910144/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10910144/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Design of Third-Order Dual-Band BPF With a Tunable Lower Band Using Third-Harmonic Dual-Null-Points Loading Scheme on λ/4 UIR
This letter presents a reconfigurable third-order dual-band bandpass filter (BPF) that features independent frequency tuning of a lower passband with constant absolute bandwidth (CABW) and a fixed upper passband. A combline structure using a third-harmonic (${f} _{3}$ ) dual-null-point semi-lumped loading scheme on quarter-wavelength ($\lambda $ /4) uniform impedance resonator (UIR) is proposed. This configuration enables frequency tuning of the lower band at fundamental frequency (${f} _{1}$ ) and the fixing of the upper band at ${f} _{3}$ by series-loading varactors at the current null point (CNP) at ${f} _{3}$ . Meanwhile, the coupling coefficient of the lower band can be controlled to meet the requirements of CABW by parallel-loading lumped inductors between each two resonators and located at their voltage null points (VNPs) at ${f} _{3}$ . The mutual independence of parallel- and series-loading at the VNP and CNP is advantageous, as both lumped loadings do not affect the upper band entirely, including frequency and ABW. Based on these, the fabricated BPF exhibits a frequency-tuning range (TR) of 52.1% with a CABW of $150~\pm ~6$ MHz in the lower band, while the upper band maintains a fixed frequency and an ABW of 150 MHz, which shows good agreements between simulated and measured results.