The impact of optical loss in waveguide region on the quantum well design of deep-ultraviolet AlGaN lasers diodes

AlGaN-based semiconductor lasers have emerged as promising candidates for DUV light sources due to their tunable emission properties and compactness. However, these lasers face significant challenges, particularly in overcoming optical losses due to the high energy of DUV photons and severe material defects in AlGaN. This study simulates the performance of AlGaN DUV lasers, focusing on optimizing number and thickness and period number of quantum well and understanding the impact of optical loss on laser performance. The results demonstrate that thinner single quantum well structures exhibit better performance under conditions of low optical loss. However, as optical loss increases, the the preferred choice will be shifted to thicker single quantum well structures or thinner double quantum well structures. These findings offer insights for the design of more efficient and reliable DUV AlGaN lasers, potentially broadening their industrial and commercial applications.