Jaehyeok Kim, Hwi Yoon, Inkyu Sohn, Tatsuya Nakazawa, Sangyoon Lee, Donghyun Kim, Yusuke Ohshima, Hiroki Sato, Seunggi Seo, Sojeong Eom, Seung-Min Chung, Hyungjun Kim
{"title":"采用化学气相沉积和后硫化工艺制备的近红外自供电RuS2xSe2 - 2x合金光电探测器","authors":"Jaehyeok Kim, Hwi Yoon, Inkyu Sohn, Tatsuya Nakazawa, Sangyoon Lee, Donghyun Kim, Yusuke Ohshima, Hiroki Sato, Seunggi Seo, Sojeong Eom, Seung-Min Chung, Hyungjun Kim","doi":"10.1007/s12598-024-03152-3","DOIUrl":null,"url":null,"abstract":"<div><p>Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe<sub>2</sub> thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy films using the post-sulfurization process after CVD RuSe<sub>2</sub> with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> thin film through an efficient deposition method could be suitable for various optoelectronic applications.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":749,"journal":{"name":"Rare Metals","volume":"44 6","pages":"4050 - 4060"},"PeriodicalIF":9.6000,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Near-infrared self-powered RuS2xSe2−2x alloy photodetector via chemical vapor deposition RuSe2 and post-sulfurization process\",\"authors\":\"Jaehyeok Kim, Hwi Yoon, Inkyu Sohn, Tatsuya Nakazawa, Sangyoon Lee, Donghyun Kim, Yusuke Ohshima, Hiroki Sato, Seunggi Seo, Sojeong Eom, Seung-Min Chung, Hyungjun Kim\",\"doi\":\"10.1007/s12598-024-03152-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe<sub>2</sub> thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy films using the post-sulfurization process after CVD RuSe<sub>2</sub> with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> thin film through an efficient deposition method could be suitable for various optoelectronic applications.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":749,\"journal\":{\"name\":\"Rare Metals\",\"volume\":\"44 6\",\"pages\":\"4050 - 4060\"},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2025-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rare Metals\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12598-024-03152-3\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rare Metals","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12598-024-03152-3","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Near-infrared self-powered RuS2xSe2−2x alloy photodetector via chemical vapor deposition RuSe2 and post-sulfurization process
Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe2 thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS2xSe2−2x alloy films using the post-sulfurization process after CVD RuSe2 with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS2xSe2−2x alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS2xSe2−2x thin film through an efficient deposition method could be suitable for various optoelectronic applications.
期刊介绍：
Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.
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