粗化电流密度对RTF铜箔组织和性能的影响

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-05-12 DOI:10.1016/j.mseb.2025.118393

Miao Jiang, Haojie Wang, Delong Chen, Ziting Liu, Yan Shen, Chengfei Zhu

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引用次数: 0

摘要

粗化生产反处理铜箔时，电流密度的选择会影响铜离子的沉积。研究了3.6 ~ 10.8 A/dm2电流密度对RTF铜箔的影响。建立了基于4个结构参数的粗糙度和剥离强度回归方程。采用多维图像来说明结构参数与性能之间的关系。结果表明，影响铜箔粗糙度的因素权重依次为：覆盖率、铜箔结节尺寸、铜箔结节尺寸方差。铜结核的大小和密度对铜箔剥离强度的影响同样重要。实验和预测的平均错误率分别为2.32%和1.73%。在最佳电流密度为9 A/dm2时，RTF铜箔的粗糙度为2.714 μm，剥离强度为1.09 N/mm。

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Effect of roughening current density on the structure and performance of RTF copper foil

When producing reverse treated copper foil (RTF) by roughening raw foil, the selection of current density can affect the copper ions deposition. This study investigated the effect of 3.6 ∼ 10.8 A/dm² current density on RTF copper foil. The roughness and peel strength regression equations were established based on four structural parameters. Multidimensional images were employed to illustrate the relationship between structural parameters and performance. The results showed that the weight of factors affecting copper foil roughness was ranked as follows: coverage rate, copper nodule size, and nodule size variance. The copper nodule size variance and density were equally important in influencing the peel strength of the copper foil. The average experimental and predicted error rate is approximately 2.32 % and 1.73 %. The optimal current density was determined to be 9 A/dm², at which the RTF copper foil exhibited both a low roughness of 2.714 μm and a high peel strength of 1.09 N/mm.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.