Numerical Study of Tungsten Growth in a Chemical Vapor Deposition Reactor

This paper presents a comprehensive study of the chemical vapor deposition (CVD) process for tungsten growth, emphasizing the effects of key operational parameters on deposition rate and uniformity. Numerical simulations were conducted to explore the flow and temperature fields within the reactor, revealing significant insights into gas dynamics and thermal interactions. Results demonstrated that substrate temperature and mass flow rate are critical factors influencing the deposition rate, with higher values promoting enhanced growth. The orthogonal test method was employed to optimize five parameters: mass flow rate, substrate temperature, inlet gas temperature, inlet H₂/WF₆ mole ratio, and operating pressure, resulting in optimal combinations for maximizing deposition rate and uniformity. The findings indicate that substrate temperature primarily governs growth uniformity, while mass flow rate significantly affects the deposition rate. This research contributes valuable insights for optimizing CVD processes, aiming to improve the quality of tungsten films for advanced applications.