{"title":"p-GaN hemt基紫外探测器的低温光响应性","authors":"Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang","doi":"10.1063/5.0264963","DOIUrl":null,"url":null,"abstract":"In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures\",\"authors\":\"Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang\",\"doi\":\"10.1063/5.0264963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"28 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0264963\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0264963","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures
In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.