p-GaN hemt基紫外探测器的低温光响应性

IF 3.6 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang
{"title":"p-GaN hemt基紫外探测器的低温光响应性","authors":"Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang","doi":"10.1063/5.0264963","DOIUrl":null,"url":null,"abstract":"In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"28 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures\",\"authors\":\"Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang\",\"doi\":\"10.1063/5.0264963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"28 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0264963\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0264963","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

在这项工作中,我们进行了高性能p-GaN高电子迁移率晶体管紫外探测器在低温下的光响应性研究。该器件在100 K时的响应率达到2.8 × 106 A/W,显示了其在寒冷环境中的巨大潜力。同时,还讨论了光生载流子与缺陷相互作用的机理。对其衰变行为的定量分析表明,两个陷阱能级决定了不同温度区间内的衰变行为。这为理解持续光导行为提供了建设性的证据,对进一步提高器件性能具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures
In this work, we carried out research on the photoresponsivity of a high-performance p-GaN high-electron mobility transistor-based ultraviolet photodetector at low temperatures. The device exhibited an extraordinary responsivity of 2.8 × 106 A/W at 100 K, demonstrating its great potential in frigid environment. Meanwhile, the mechanism of interaction between photo-generated carriers and defects is also discussed. The quantitative analysis of the decay behavior reveals that two trap levels determined the decay behavior in different temperature intervals. It provides constructive evidence for understanding the persistent photoconductivity behavior and can be meaningful in further improvement of the device performance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信