{"title":"银壳形貌对微米Cu@Ag/亚微米银复合浆料热压烧结键合的影响","authors":"Yeongjung Kim, Jong-Hyun Lee","doi":"10.1007/s10854-025-14848-2","DOIUrl":null,"url":null,"abstract":"<div><p>Ag-coated Cu (Cu@Ag) particles with antioxidant properties and price competitiveness are considered as fillers in sinter-bonding pastes for the die attachment of wide band-gap semiconductors at low temperature such as 250 ℃. To achieve the rapid sinter-bonding of Cu@Ag particles at 250 ℃, micron Cu@Ag particles with an Ag shell composed of numerous Ag nanoplatelets (ANP) were used, and the effect of Ag shell morphology on the sinter-bondability was confirmed by comparing with conventional micron Cu@Ag particles with a smooth surface (ASS). For the high packing densities of fillers, the composite particles were prepared by mixing them with submicron Ag particles in ratios of 5:5, 6:4, and 7:3. Sinter-bonding of pastes containing the ASS/Ag or ANP/Ag composite particles with different mixing ratio (SSA55, NPA55, NPA64, and NPA73) was conducted under 10 MPa for 1–10 min with nitrogen blowing. The bondline using NPA55 exhibited a near full-density microstructure and high shear strength (25.81 MPa) when sintered for a short time of 1 min, which was a much higher value than the 14.41 MPa of SSA55. These results demonstrate that rapid sinter-bonding at 250 ℃ can be achieved using novel micron Cu@Ag particles with large surface area and high surface energy.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Ag shell morphology on sinter-bonding by thermo-compression of micron Cu@Ag/submicron Ag composite paste\",\"authors\":\"Yeongjung Kim, Jong-Hyun Lee\",\"doi\":\"10.1007/s10854-025-14848-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Ag-coated Cu (Cu@Ag) particles with antioxidant properties and price competitiveness are considered as fillers in sinter-bonding pastes for the die attachment of wide band-gap semiconductors at low temperature such as 250 ℃. To achieve the rapid sinter-bonding of Cu@Ag particles at 250 ℃, micron Cu@Ag particles with an Ag shell composed of numerous Ag nanoplatelets (ANP) were used, and the effect of Ag shell morphology on the sinter-bondability was confirmed by comparing with conventional micron Cu@Ag particles with a smooth surface (ASS). For the high packing densities of fillers, the composite particles were prepared by mixing them with submicron Ag particles in ratios of 5:5, 6:4, and 7:3. Sinter-bonding of pastes containing the ASS/Ag or ANP/Ag composite particles with different mixing ratio (SSA55, NPA55, NPA64, and NPA73) was conducted under 10 MPa for 1–10 min with nitrogen blowing. The bondline using NPA55 exhibited a near full-density microstructure and high shear strength (25.81 MPa) when sintered for a short time of 1 min, which was a much higher value than the 14.41 MPa of SSA55. These results demonstrate that rapid sinter-bonding at 250 ℃ can be achieved using novel micron Cu@Ag particles with large surface area and high surface energy.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 14\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14848-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14848-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of Ag shell morphology on sinter-bonding by thermo-compression of micron Cu@Ag/submicron Ag composite paste
Ag-coated Cu (Cu@Ag) particles with antioxidant properties and price competitiveness are considered as fillers in sinter-bonding pastes for the die attachment of wide band-gap semiconductors at low temperature such as 250 ℃. To achieve the rapid sinter-bonding of Cu@Ag particles at 250 ℃, micron Cu@Ag particles with an Ag shell composed of numerous Ag nanoplatelets (ANP) were used, and the effect of Ag shell morphology on the sinter-bondability was confirmed by comparing with conventional micron Cu@Ag particles with a smooth surface (ASS). For the high packing densities of fillers, the composite particles were prepared by mixing them with submicron Ag particles in ratios of 5:5, 6:4, and 7:3. Sinter-bonding of pastes containing the ASS/Ag or ANP/Ag composite particles with different mixing ratio (SSA55, NPA55, NPA64, and NPA73) was conducted under 10 MPa for 1–10 min with nitrogen blowing. The bondline using NPA55 exhibited a near full-density microstructure and high shear strength (25.81 MPa) when sintered for a short time of 1 min, which was a much higher value than the 14.41 MPa of SSA55. These results demonstrate that rapid sinter-bonding at 250 ℃ can be achieved using novel micron Cu@Ag particles with large surface area and high surface energy.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.