亚阈值铽掺杂下非线性LiNbO3:Tb3+单晶的缺陷结构

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
N. V. Sidorov, M. N. Palatnikov, L. A. Bobreva, O. V. Palatnikova, P. P. Sverbil, A. Yu. Pyatyshev, M. K. Tarabrin, A. A. Teslenko
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引用次数: 0

摘要

光学显微镜研究表明,Li2O-Nb2O5-Tb2O3熔体的化学成分对掺有亚阈值浓度Tb3+离子的非线性光学LiNbO3单晶中生长缺陷结构的宏观和微观结构有显著影响,有望成为蓝光谱范围内产生连续波的非线性激光主动介质。在1000-2000 cm−1的频率范围内,在LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%)晶体中检测到二阶拉曼谱线,其强度和频率取决于Tb3+离子的浓度。这些线被解释为基本光学振动的束缚状态的表现,这是由于振动的强非谐和性和晶体中各种结构缺陷的存在而形成的。结果表明,LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%)晶体在oh基团伸缩振动区域的红外吸收光谱中出现频率为3470,3483和3486 cm−1的谱线是由于晶体的化学统计(Li/Nb值)的违反和复杂缺陷(VLi-OH)的形成。结果表明,在所研究的LiNbO3:Tb3+晶体中,VLi点缺陷比同晶LiNbO3晶体少2倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defect structures in active nonlinear LiNbO3:Tb3+ single crystals with subthreshold terbium doping

Optical microscopy studies have demonstrated that the chemical composition of the Li2O–Nb2O5–Tb2O3 melt has a significant effect on the macro- and microdomain configuration of the growth defect structure in the bulk of the nonlinear optical LiNbO3 single crystal doped with subthreshold concentrations of the Tb3+ ions, which is promising as an active nonlinear laser medium for continuous-wave generation in the blue spectral range. In the frequency range of 1000–2000 cm−1, second-order Raman lines were detected in LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%) crystals, the intensity and frequencies of which depend on the concentration of the Tb3+ ions. These lines are interpreted as manifestations of bound states of fundamental optical vibrations formed as a result of strong anharmonicity of vibrations and the presence of various types of structural defects in the crystal. It is shown that the presence of lines with frequencies of 3470, 3483, and 3486 cm−1 in the IR absorption spectra of LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%) crystals in the region of OH-group stretching vibrations is due to the violation of the stoichiometry (Li/Nb values) of the crystal and the formation of complex defects (VLi-OH). It is established that in the studied LiNbO3:Tb3+ crystals, there are two times fewer VLi point defects than in the congruent LiNbO3 crystal.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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