Rb MEMS晶圆级自动系统的激活与表征

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-05-07 DOI:10.1016/j.sna.2025.116621

M. Gozzelino , E. Cerrato , C. Gionco , S. Micalizio , G. Aprile , M. Crivellari , F. Levi , D. Calonico

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引用次数: 0

摘要

向小型化和低功耗量子传感器的推进需要可靠和可大规模制造的原子库。在本文中，我们报告了一个自动系统的实现，以激活和表征微晶圆制备的Rb细胞。该装置由一个机动平移系统和两个光源组成，一个高功率光源用于激活Rb药丸，另一个用于光谱目的。实时分析光谱信号，以检查激活过程中Rb的释放。或者，信号识别可以在后期制作中用于筛选整个晶圆。从这个意义上说，所提出的自动化装置是一种有效的工具，可以根据Rb含量和信号对比度来表征电池生产，从而向基于小型化碱蒸汽电池的设备的大规模生产迈出了一步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Activation and characterization of Rb MEMS cells with an automatic system at wafer level

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Activation and characterization of Rb MEMS cells with an automatic system at wafer level

The push towards miniaturized and low-power quantum sensors demands reliable and mass-manufacturable atomic reservoirs. In this paper, we report on the implementation of an automatic system to activate and characterize a wafer of microfabricated Rb cells. The setup is composed of a motorized translation system jointly with two optical sources, a high-power one used for activating Rb pills and the other for spectroscopy purposes. The spectroscopy signal is analyzed in real-time to check the release of Rb during activation. Alternatively, the signal recognition can be used in post-production for screening the entire wafer. In this sense, the presented automated setup represents an effective tool to characterize the cell production in terms of Rb content and signal contrast, making a step towards mass production of devices based on miniaturized alkali vapor cells.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...