{"title":"电磁铁对增强型霍尔效应放大器纳米器件(HAND)的影响-第1部分:建模和仿真","authors":"Raz Mottes , Avi Karsenty","doi":"10.1016/j.simpat.2025.103133","DOIUrl":null,"url":null,"abstract":"<div><div>A new version of a nanoscale device, based on the famous Hall Effect, and named HAND (Hall Amplifier Nanoscale Device), was designed and analytically modelled, with the goal of implementing the macro-Hall effect on the nano scale. Following the physics of the Hall effect, the device receives a current as an input and creates a voltage as an output, which means it possesses a low input impedance and a high output impedance. While most other nanoscale devices based on the Hall effect are sensors, HAND operates as both an amplifier and a modulator, and it can be expected to find use in electronic circuits at very high frequencies (tens of THz). The first generation of the device required several improvements in advance of future fabrication of the second generation. One of these was enabling an increase of the applied magnetic field to higher values while preventing undesirable overheating of the device. Several approaches were taken toward this end, including changes to the material composition, device geometry, and other physical parameters of the HAND. A renewed mathematical description of the device behavior in DC condition was developed, as well as thorough analytical models for classical Hall Effect, in order to accurate forecast the behavior of the re-designed HAND. The analytical and numerical simulation results matched fully, validating the mathematical model for the case of a spiral coil geometry. This improved device, combining high frequency operation, amplification, the Hall effect, and nanoscale dimensions, is capable of revolutionizing microelectronic circuitry.</div></div>","PeriodicalId":49518,"journal":{"name":"Simulation Modelling Practice and Theory","volume":"142 ","pages":"Article 103133"},"PeriodicalIF":3.5000,"publicationDate":"2025-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of electro-magnets on enhanced hall-effect amplifier nanoscale device (HAND) – part 1: Modelling & simulations\",\"authors\":\"Raz Mottes , Avi Karsenty\",\"doi\":\"10.1016/j.simpat.2025.103133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>A new version of a nanoscale device, based on the famous Hall Effect, and named HAND (Hall Amplifier Nanoscale Device), was designed and analytically modelled, with the goal of implementing the macro-Hall effect on the nano scale. Following the physics of the Hall effect, the device receives a current as an input and creates a voltage as an output, which means it possesses a low input impedance and a high output impedance. While most other nanoscale devices based on the Hall effect are sensors, HAND operates as both an amplifier and a modulator, and it can be expected to find use in electronic circuits at very high frequencies (tens of THz). The first generation of the device required several improvements in advance of future fabrication of the second generation. One of these was enabling an increase of the applied magnetic field to higher values while preventing undesirable overheating of the device. Several approaches were taken toward this end, including changes to the material composition, device geometry, and other physical parameters of the HAND. A renewed mathematical description of the device behavior in DC condition was developed, as well as thorough analytical models for classical Hall Effect, in order to accurate forecast the behavior of the re-designed HAND. The analytical and numerical simulation results matched fully, validating the mathematical model for the case of a spiral coil geometry. This improved device, combining high frequency operation, amplification, the Hall effect, and nanoscale dimensions, is capable of revolutionizing microelectronic circuitry.</div></div>\",\"PeriodicalId\":49518,\"journal\":{\"name\":\"Simulation Modelling Practice and Theory\",\"volume\":\"142 \",\"pages\":\"Article 103133\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Simulation Modelling Practice and Theory\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1569190X25000681\",\"RegionNum\":2,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Simulation Modelling Practice and Theory","FirstCategoryId":"94","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1569190X25000681","RegionNum":2,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS","Score":null,"Total":0}
Impact of electro-magnets on enhanced hall-effect amplifier nanoscale device (HAND) – part 1: Modelling & simulations
A new version of a nanoscale device, based on the famous Hall Effect, and named HAND (Hall Amplifier Nanoscale Device), was designed and analytically modelled, with the goal of implementing the macro-Hall effect on the nano scale. Following the physics of the Hall effect, the device receives a current as an input and creates a voltage as an output, which means it possesses a low input impedance and a high output impedance. While most other nanoscale devices based on the Hall effect are sensors, HAND operates as both an amplifier and a modulator, and it can be expected to find use in electronic circuits at very high frequencies (tens of THz). The first generation of the device required several improvements in advance of future fabrication of the second generation. One of these was enabling an increase of the applied magnetic field to higher values while preventing undesirable overheating of the device. Several approaches were taken toward this end, including changes to the material composition, device geometry, and other physical parameters of the HAND. A renewed mathematical description of the device behavior in DC condition was developed, as well as thorough analytical models for classical Hall Effect, in order to accurate forecast the behavior of the re-designed HAND. The analytical and numerical simulation results matched fully, validating the mathematical model for the case of a spiral coil geometry. This improved device, combining high frequency operation, amplification, the Hall effect, and nanoscale dimensions, is capable of revolutionizing microelectronic circuitry.
期刊介绍:
The journal Simulation Modelling Practice and Theory provides a forum for original, high-quality papers dealing with any aspect of systems simulation and modelling.
The journal aims at being a reference and a powerful tool to all those professionally active and/or interested in the methods and applications of simulation. Submitted papers will be peer reviewed and must significantly contribute to modelling and simulation in general or use modelling and simulation in application areas.
Paper submission is solicited on:
• theoretical aspects of modelling and simulation including formal modelling, model-checking, random number generators, sensitivity analysis, variance reduction techniques, experimental design, meta-modelling, methods and algorithms for validation and verification, selection and comparison procedures etc.;
• methodology and application of modelling and simulation in any area, including computer systems, networks, real-time and embedded systems, mobile and intelligent agents, manufacturing and transportation systems, management, engineering, biomedical engineering, economics, ecology and environment, education, transaction handling, etc.;
• simulation languages and environments including those, specific to distributed computing, grid computing, high performance computers or computer networks, etc.;
• distributed and real-time simulation, simulation interoperability;
• tools for high performance computing simulation, including dedicated architectures and parallel computing.