Electrically controlled edge-contact spin valves based on two-dimensional transition metal dichalcogenides

Rapid technological advances have increased the demand for high-performance, energy-efficient semiconductor devices, particularly in wireless communications, artificial intelligence (AI), machine learning, and the Internet of Things (IoT). The limitations of conventional memory devices underscore the need for advanced solutions that offer both performance and efficiency. Integrating two-dimensional (2D) materials is crucial for next-generation memory and 3D integrated circuit (3DIC) systems. This theoretical study presents an electrically controlled edge-contact transition metal dichalcogenides spin valve (EC-TMDSV), designed to simultaneously achieve ultrahigh performance, improved energy efficiency, and scalability for future memory technologies. The maximum tunneling magnetoresistance (TMR) of the EC-TMDSV is approximately 10 times higher than that of the conventional top-contact TMDSV (TC-TMDSV), enabling faster and more accurate memory read operations compared to existing technologies. Additionally, the maximum spin current density of the proposed EC-TMDSV is about 20 times greater than that of traditional TC-TMDSVs, promoting faster write operations. Furthermore, the optimal operating regions for both reading and writing modes are clearly defined and distinct, effectively preventing undesired mixed operations. These results open new avenues for MRAM applications and promise significant breakthroughs in electrically controlled 2D-based edge-contact systems.