Er3+掺杂NaSrVO4无机荧光粉的上转换发光及Judd-Ofelt分析

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Meniak Khajuria, Sajad A. Bhat, Rohit Raina, Pankaj Biswas
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引用次数: 0

摘要

含有上转换发光材料的纳米荧光粉的开发已经证明了它们在光伏领域的潜在应用。在此背景下,本文探讨了在Er3+离子激活下NaSrVO4荧光粉的上转换能力。以尿素为燃料,采用易燃法合成了NaSr(1-x)VO4:xEr3+(0.01≤x≤0.04)荧光粉。通过粉末x射线衍射研究相纯度,证实形成了具有P21/n空间基团的单相(单斜)材料。利用透射电子显微镜和x射线光电子能谱分析了荧光粉的形态和元素组成。发现掺杂剂铒处于+ 3氧化态。所合成的荧光粉的直接带隙为3.69 eV。系统地研究了上转换光致发光,广泛地分析了掺杂剂(Er3+)浓度对发光性能的影响。合成的荧光粉的发射色落在光谱的绿色区域内,具有良好的颜色纯度。综上所述,该合成的荧光粉在光电材料领域具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Upconversion luminescence and Judd–Ofelt analysis of Er3+ doped NaSrVO4 inorganic phosphor

The development of nano-phosphors containing upconverting luminescent materials has demonstrated their potential applications in photovoltaics. In this context, this article explores the upconversion capabilities of NaSrVO4 phosphor when activated by Er3+ ions. The NaSr(1-x)VO4:xEr3+ (0.01 ≤ x ≤ 0.04) phosphors were synthesized using a facile combustion method with urea as the fuel. Phase purity, investigated through powder X-ray diffraction, confirms the formation of a single-phase (monoclinic) material with a P21/n space group. The morphological and elemental composition of the phosphor were analyzed using transmission electron microscopy and X-ray photoelectron spectroscopy. The dopant, erbium, was found to be in the + 3 oxidation state. The direct bandgap of the synthesized phosphor is 3.69 eV for the doped sample. Upconversion photoluminescence was systematically studied, and the impact of dopant (Er3+) concentration on luminescent properties was extensively analyzed. The emission color of the synthesized phosphor falls within the green region of the spectrum and exhibits good color purity. Overall, the results suggest the potential application of the synthesized phosphor in the field of optoelectronic materials.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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