Shammas Mushtaq, Sofia Tahir, Adnan Ali, Rasmiah S. Almufarij, Arslan Ashfaq
{"title":"低成本空穴传输层无钙钛矿太阳能电池性能的数值模拟优化","authors":"Shammas Mushtaq, Sofia Tahir, Adnan Ali, Rasmiah S. Almufarij, Arslan Ashfaq","doi":"10.1007/s12633-025-03283-x","DOIUrl":null,"url":null,"abstract":"<div><p>Metal-halide Perovskite solar cells hold great potential to become one of the excellent future photovoltaic equipment due to their desirable characteristics. However, some difficulties like stability, high manufacturing costs, and toxicity (lead-based PSCs) inhibit their commercial production. The lead-free compound Methyl ammonium tin bromide (MASnBr<sub>3</sub>) is drawing significant attention as an extremely enabling absorber layer in perovskite device architecture. In the present research work, we have developed a wide band gap HTL-free perovskite solar cell with Au used as metal back contact and cadmium sulfide (CdS) serving as an electron transport layer. In the present research SCAPS-1D software is used to declare the effect of various parameters, such as thickness, doping density, and defect density of the absorber and electron transport layers that significantly affect the power conversion efficiency. The interface MASnBr<sub>3</sub>/CdS defect density, corresponding diffusion length, carrier lifetime, and their impact on PCE have also been investigated. However, the optimized novel structure device Glass/FTO/CdS/MASnBr<sub>3</sub>/Au with a theoretical PCE of 27.37% has been proposed. The device has an open circuit voltage of 0.99 (V), a short circuit current density of 32.31 (mA/cm<sup>2</sup>), and a fill factor of 85.56 (%).\n</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 6","pages":"1449 - 1463"},"PeriodicalIF":3.3000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Optimization of Cost-Effective Hole Transport Layer Free Perovskite Solar Cell by Numerical Simulation\",\"authors\":\"Shammas Mushtaq, Sofia Tahir, Adnan Ali, Rasmiah S. Almufarij, Arslan Ashfaq\",\"doi\":\"10.1007/s12633-025-03283-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Metal-halide Perovskite solar cells hold great potential to become one of the excellent future photovoltaic equipment due to their desirable characteristics. However, some difficulties like stability, high manufacturing costs, and toxicity (lead-based PSCs) inhibit their commercial production. The lead-free compound Methyl ammonium tin bromide (MASnBr<sub>3</sub>) is drawing significant attention as an extremely enabling absorber layer in perovskite device architecture. In the present research work, we have developed a wide band gap HTL-free perovskite solar cell with Au used as metal back contact and cadmium sulfide (CdS) serving as an electron transport layer. In the present research SCAPS-1D software is used to declare the effect of various parameters, such as thickness, doping density, and defect density of the absorber and electron transport layers that significantly affect the power conversion efficiency. The interface MASnBr<sub>3</sub>/CdS defect density, corresponding diffusion length, carrier lifetime, and their impact on PCE have also been investigated. However, the optimized novel structure device Glass/FTO/CdS/MASnBr<sub>3</sub>/Au with a theoretical PCE of 27.37% has been proposed. The device has an open circuit voltage of 0.99 (V), a short circuit current density of 32.31 (mA/cm<sup>2</sup>), and a fill factor of 85.56 (%).\\n</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 6\",\"pages\":\"1449 - 1463\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03283-x\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03283-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Performance Optimization of Cost-Effective Hole Transport Layer Free Perovskite Solar Cell by Numerical Simulation
Metal-halide Perovskite solar cells hold great potential to become one of the excellent future photovoltaic equipment due to their desirable characteristics. However, some difficulties like stability, high manufacturing costs, and toxicity (lead-based PSCs) inhibit their commercial production. The lead-free compound Methyl ammonium tin bromide (MASnBr3) is drawing significant attention as an extremely enabling absorber layer in perovskite device architecture. In the present research work, we have developed a wide band gap HTL-free perovskite solar cell with Au used as metal back contact and cadmium sulfide (CdS) serving as an electron transport layer. In the present research SCAPS-1D software is used to declare the effect of various parameters, such as thickness, doping density, and defect density of the absorber and electron transport layers that significantly affect the power conversion efficiency. The interface MASnBr3/CdS defect density, corresponding diffusion length, carrier lifetime, and their impact on PCE have also been investigated. However, the optimized novel structure device Glass/FTO/CdS/MASnBr3/Au with a theoretical PCE of 27.37% has been proposed. The device has an open circuit voltage of 0.99 (V), a short circuit current density of 32.31 (mA/cm2), and a fill factor of 85.56 (%).
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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