水热法制备铋掺杂Ni3Se2/rGO复合材料，提高其电化学性能

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2025-05-04 DOI:10.1016/j.diamond.2025.112410

Abdul Waheed , Soumaya Gouadria , Abdullah Ghulam Al-Sehemi , Abhinav Kumar

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引用次数: 0

摘要

复合掺杂可以通过减少金属硒化物的纳米颗粒团聚而显著改善其电化学性能，提高各种掺杂剂和碳基材料的循环稳定性，是目前研究领域的热点。我们成功地利用水热工艺制备了一种独特的双掺杂Ni₃Se₂纳米颗粒和还原氧化石墨烯的异质结构。采用各种电化学和物理技术对双掺杂Ni₃Se₂/rGO进行了表征。采用不同的分析技术对双掺杂Ni3Se2/rGO进行了评价。结果表明，复合材料在储能应用中表现优异，具有提高超级电容器效率的潜力。Brunner Emmett Teller测定了制备电极材料的表面积，发现复合材料具有更大的表面积。Bi掺杂的Ni3Se2/rGO表现出优异的电容Cs为1194 F g−1，使用GCD计算，在1.0 A g−1下循环5000次后表现出稳定的行为。根据Nyquist图测定电荷转移电阻为0.02 Ω。具有双掺杂Ni₃Se₂/rGO电极的对称超级电容器实现了令人印象深刻的15 Wh kg - 1的能量密度（Ed）和1140 W kg - 1的功率密度（Pd）。此外，复合材料显示了在电流密度(j)为1 a g−1时的336 F g−1比电容。上述所有参数的改善表明，Bi掺杂Ni3Se2/rGO有潜力作为即将到来的储能技术的电极。

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Enhanced electrochemical performance of Bi doped Ni3Se2/rGO composite synthesized via hydrothermal method

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Enhanced electrochemical performance of Bi doped Ni3Se2/rGO composite synthesized via hydrothermal method

The compositing and doping can significantly improve the electrochemical performance of metal selenides by reducing their nanoparticles agglomeration, improved the cycling stability using various dopants and carbon base materials and it is a currently a hot topic in research community. We have successfully fabricated a unique heterostructure with Bi-doped Ni₃Se₂ nanoparticles and rGO using a hydrothermal process. The Bi-doped Ni₃Se₂/rGO was characterized using various electrochemical and physical techniques. Bi-doped Ni₃Se₂/rGO were evaluated by different analytical techniques. The results showed outstanding performance in energy storage applications, demonstrating the composite materials potential to improve supercapacitor efficiency. Brunner Emmett Teller determined surface area of fabricated electrode materials, which found to be that composite has greater surfacee area. The Bi doped Ni₃Se₂/rGO exhibits exceptional capacitance C_s of 1194 F g⁻¹, which calculated using GCD that showed stable behavior after the 5000^th cycle at 1.0 A g⁻¹. Charge transfer resistance was determined from Nyquist plot which found to be 0.02 Ω. A symmetric supercapacitor featuring Bi-doped Ni₃Se₂/rGO electrodes achieves an impressive energy density (E_d) of 15 Wh kg⁻¹ and power density (P_d) of 1140 W kg⁻¹. Furthermore, composite shows the 336 F g⁻¹ specific capacitance at a current density (j) of 1 A g⁻¹. The improvement in all above parameters suggested that Bi doped Ni₃Se₂/rGO has potential to utilize as an electrode for upcoming energy storage technologies.

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来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.