一维调制半导体晶格中的分数阶磁击穿频率

IF 1.4 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheev, Z. E. Krix, O. P. Sushkov
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引用次数: 0

摘要

基于二维电子气体的半导体晶格的四端器件在单粒子量子力学中模拟了在存在或不存在无序的情况下,静电势的一维调制的不同费米能量和振幅。四端电阻由Landauer-Buttiker形式的透射系数确定。态密度或电阻Rxx作为反磁场1/B的函数的傅里叶分析给出了由磁击穿引起的磁振荡的频率。实验中观察到的可公度振荡频率在态密度的傅里叶变换中不存在,但在电阻Rxx(1/B)中存在。随着调制幅值的增加,电阻中出现磁击穿频率分数组合的振荡,但态密度中不存在振荡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fractional Magnetic Breakdown Frequencies in Semiconductor Lattices with One-Dimensional Modulation

Four-terminal devices with semiconductor lattices based on a two-dimensional electron gas have been simulated within single-particle quantum mechanics at different Fermi energies and amplitudes of one-dimensional modulation of the electrostatic potential in the presence or absence of disorder. The four-terminal resistances have been determined by the transmission coefficients in the Landauer–Buttiker formalism. The Fourier analysis of the density of states or the resistance Rxx as a function of the inverse magnetic field 1/B gives the frequencies of magnetic oscillations caused by the magnetic breakdown. It has been shown that the frequencies of commensurability oscillations observed in the experiments are absent in the Fourier transform of the density of states but are present for the resistance Rxx(1/B). With an increase in the modulation amplitude, oscillations with fractional combinations of the magnetic breakdown frequencies appear in the resistance, but they are absent in the density of states.

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来源期刊
JETP Letters
JETP Letters 物理-物理:综合
CiteScore
2.40
自引率
30.80%
发文量
164
审稿时长
3-6 weeks
期刊介绍: All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.
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