Cubic boron arsenide: An emerging semiconductor with exceptional thermal conductivity and high carrier mobility

Over the past decade, cubic boron arsenide (BAs) has emerged as a highly promising semiconductor owing to its extraordinary thermal conductivity (1,200 W/m·K) and high ambipolar mobility (1,600 cm²/V·s). This unique combination has spurred significant research interest in its potential for advanced device applications. However, the challenge of growing uniform, high-quality crystals has hindered its widespread adoption, limiting its realization in high-performance devices. To accelerate the development and utilization of BAs, we systematically review recent theoretical and experimental advancements, focusing on key aspects such as carrier mobility, carrier relaxation, and the impact of defects on thermal conductivity and carrier mobility. Additionally, we explore emerging applications, persistent challenges, and future research directions. By addressing these critical issues, we aim to inspire further research and facilitate the development of next-generation electronic and optoelectronic devices based on BAs.